Full silicon-nitride probes with corner lithography wireframes for scanning Hall probe microscopy

Kodai Hatakeyama; Edin Sarajlic; Martin Herman Siekman; R. Huijink; Leon Abelmann

Full silicon-nitride probes with corner lithography wireframes for scanning Hall probe microscopy

Kodai Hatakeyama
, Edin Sarajlic
, Martin Herman Siekman
, R. Huijink
, Leon Abelmann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

5 Downloads (Pure)

Abstract

We present a improvement of our previous design of wireframe tips for scanning Hall probes. By doubling the separation between electrode structures and cantilever base, the yield could be raised from less than 10% to over 75%. To avoid build up of stress gradients, the entire probe is manufactured from silicon-nitride, using a polysilicon sacrificial layer. In this paper cantilever stress measurement and Initial electrical characterization are presented.

Original language	Undefined
Title of host publication	23rd Micromechanics and Microsystems Europe Workshop, MME 2012
Place of Publication	Ilmenau
Publisher	Ilmenau University of Technology
Pages	A13
Number of pages	4
ISBN (Print)	978-3-938843-71-0
Publication status	Published - Sept 2012
Event	23rd Micromechanics and Microsystems Europe Workshop, MME 2012 - Ilmenau, Germany Duration: 9 Sept 2012 → 12 Sept 2012 Conference number: 23

Publication series

Name
Publisher	Ilmenau University of Technology

Workshop

Workshop	23rd Micromechanics and Microsystems Europe Workshop, MME 2012
Abbreviated title	MME
Country/Territory	Germany
City	Ilmenau
Period	9/09/12 → 12/09/12

Keywords

EWI-22587
TST-SMI: Formerly in EWI-SMI
Corner lithography technique
Scanning Hall Probe Microscopy
IR-82308
METIS-289801

Access to Document

http://eprints.eemcs.utwente.nl/secure2/22587/01/11949Hatakeyama-20120705-abstract.pdf

Cite this

Hatakeyama, K., Sarajlic, E., Siekman, M. H., Huijink, R., & Abelmann, L. (2012). Full silicon-nitride probes with corner lithography wireframes for scanning Hall probe microscopy. In 23rd Micromechanics and Microsystems Europe Workshop, MME 2012 (pp. A13). Ilmenau University of Technology. http://eprints.eemcs.utwente.nl/secure2/22587/01/11949Hatakeyama-20120705-abstract.pdf

@inproceedings{7d7bb5f8fc6242f99a98c54a9d7a108b,

title = "Full silicon-nitride probes with corner lithography wireframes for scanning Hall probe microscopy",

abstract = "We present a improvement of our previous design of wireframe tips for scanning Hall probes. By doubling the separation between electrode structures and cantilever base, the yield could be raised from less than 10\% to over 75\%. To avoid build up of stress gradients, the entire probe is manufactured from silicon-nitride, using a polysilicon sacrificial layer. In this paper cantilever stress measurement and Initial electrical characterization are presented.",

keywords = "EWI-22587, TST-SMI: Formerly in EWI-SMI, Corner lithography technique, Scanning Hall Probe Microscopy, IR-82308, METIS-289801",

author = "Kodai Hatakeyama and Edin Sarajlic and Siekman, \{Martin Herman\} and R. Huijink and Leon Abelmann",

year = "2012",

month = sep,

language = "Undefined",

isbn = "978-3-938843-71-0",

publisher = "Ilmenau University of Technology",

pages = "A13",

booktitle = "23rd Micromechanics and Microsystems Europe Workshop, MME 2012",

note = "23rd Micromechanics and Microsystems Europe Workshop, MME 2012 ; Conference date: 09-09-2012 Through 12-09-2012",

}

Hatakeyama, K, Sarajlic, E, Siekman, MH, Huijink, R & Abelmann, L 2012, Full silicon-nitride probes with corner lithography wireframes for scanning Hall probe microscopy. in 23rd Micromechanics and Microsystems Europe Workshop, MME 2012. Ilmenau University of Technology, Ilmenau, pp. A13, 23rd Micromechanics and Microsystems Europe Workshop, MME 2012, Ilmenau, Germany, 9/09/12. <http://eprints.eemcs.utwente.nl/secure2/22587/01/11949Hatakeyama-20120705-abstract.pdf>

Full silicon-nitride probes with corner lithography wireframes for scanning Hall probe microscopy. / Hatakeyama, Kodai; Sarajlic, Edin; Siekman, Martin Herman et al.
23rd Micromechanics and Microsystems Europe Workshop, MME 2012. Ilmenau: Ilmenau University of Technology, 2012. p. A13.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Full silicon-nitride probes with corner lithography wireframes for scanning Hall probe microscopy

AU - Hatakeyama, Kodai

AU - Sarajlic, Edin

AU - Siekman, Martin Herman

AU - Huijink, R.

AU - Abelmann, Leon

N1 - Conference code: 23

PY - 2012/9

Y1 - 2012/9

N2 - We present a improvement of our previous design of wireframe tips for scanning Hall probes. By doubling the separation between electrode structures and cantilever base, the yield could be raised from less than 10% to over 75%. To avoid build up of stress gradients, the entire probe is manufactured from silicon-nitride, using a polysilicon sacrificial layer. In this paper cantilever stress measurement and Initial electrical characterization are presented.

AB - We present a improvement of our previous design of wireframe tips for scanning Hall probes. By doubling the separation between electrode structures and cantilever base, the yield could be raised from less than 10% to over 75%. To avoid build up of stress gradients, the entire probe is manufactured from silicon-nitride, using a polysilicon sacrificial layer. In this paper cantilever stress measurement and Initial electrical characterization are presented.

KW - EWI-22587

KW - TST-SMI: Formerly in EWI-SMI

KW - Corner lithography technique

KW - Scanning Hall Probe Microscopy

KW - IR-82308

KW - METIS-289801

M3 - Conference contribution

SN - 978-3-938843-71-0

SP - A13

BT - 23rd Micromechanics and Microsystems Europe Workshop, MME 2012

PB - Ilmenau University of Technology

CY - Ilmenau

T2 - 23rd Micromechanics and Microsystems Europe Workshop, MME 2012

Y2 - 9 September 2012 through 12 September 2012

ER -