Functional layers for CIGS solar cell on-chip fabrication during post-processing

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    4 Citations (Scopus)

    Abstract

    The ubiquitous deploying of wireless electronic devices due to pervasive computing results in the idea of Energy Scavenging, i.e., harvesting ambient energy from surroundings of the electronic devices [1]. As an approach to the most practical realization of such an energy scavenger, copper indium gallium selenium (CIGS) thin-film solar cells have attracted much attention due to the possibility to combine their reasonably high efficiency and low-temperature fabrication technology. The CIGS solar cells can be realized using CMOS compatible technology and are therefore suitable for CMOS post-processing and for their integration on a silicon chip as the energy scavenger.
    Original languageUndefined
    Title of host publicationProceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages487-490
    Number of pages4
    ISBN (Print)978-90-73461-56-7
    Publication statusPublished - 27 Nov 2008
    Event11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands
    Duration: 27 Nov 200828 Nov 2008
    Conference number: 11

    Publication series

    Name
    PublisherTechnology Foundation STW
    NumberWoTUG-31

    Workshop

    Workshop11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period27/11/0828/11/08

    Keywords

    • EWI-14608
    • METIS-254999
    • IR-62608
    • SC-ICF: Integrated Circuit Fabrication

    Cite this

    Lu, J., Kovalgin, A. Y., & Schmitz, J. (2008). Functional layers for CIGS solar cell on-chip fabrication during post-processing. In Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008) (pp. 487-490). Utrecht, The Netherlands: STW.