Ga segregation in DyBa2Cu3O7-δ/PrBa2Cu3-xGaO7-δ/DyBa2Cu3O7-δ ramp-type Josephson junctions

K. Verbist, O.I. Lebedev, G. van Tendeloo, M.A.J. Verhoeven, A.J.H.M. Rijnders, D.H.A. Blank, H. Rogalla

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Ramp-type Josephson junctions with highly doped PrBa2Cu3-xGaxO7-δ barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO3 substrate are observed. The Ga segregation is responsible for the deviating electrical behavior as expected from extrapolation of low doping levels (x=0.1-0.4). The Ga diffusion in the ion-milled substrate, and possibly in the base electrode, may hamper Josephson junction fabrication using substituted REBa2Cu3O7-δ materials (RE=rare earth)
Original languageEnglish
Pages (from-to)1167-1169
Number of pages3
JournalApplied physics letters
Issue number9
Publication statusPublished - 1997


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