Ga segregation in DyBa2Cu3O7-δ/PrBa2Cu3-xGaO7-δ/DyBa2Cu3O7-δ ramp-type Josephson junctions

K. Verbist; O.I. Lebedev; G. van Tendeloo; M.A.J. Verhoeven; A.J.H.M. Rijnders; D.H.A. Blank; H. Rogalla

doi:10.1063/1.118515

Ga segregation in DyBa₂Cu₃O_7-δ/PrBa₂Cu_3-xGaO_7-δ/DyBa₂Cu₃O_7-δ ramp-type Josephson junctions

K. Verbist
, O.I. Lebedev
, G. van Tendeloo
, M.A.J. Verhoeven
, A.J.H.M. Rijnders
, D.H.A. Blank
, H. Rogalla

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Ramp-type Josephson junctions with highly doped PrBa₂Cu_3-xGaxO_7-δ barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO₃ substrate are observed. The Ga segregation is responsible for the deviating electrical behavior as expected from extrapolation of low doping levels (x=0.1-0.4). The Ga diffusion in the ion-milled substrate, and possibly in the base electrode, may hamper Josephson junction fabrication using substituted REBa₂Cu₃O_7-δ materials (RE=rare earth)

Original language	English
Pages (from-to)	1167-1169
Number of pages	3
Journal	Applied physics letters
Volume	70
Issue number	9
DOIs	https://doi.org/10.1063/1.118515
Publication status	Published - 1997

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@article{26f7dc46d4df4528b068c181b4357499,

title = "Ga segregation in DyBa2Cu3O7-δ/PrBa2Cu3-xGaO7-δ/DyBa2Cu3O7-δ ramp-type Josephson junctions",

abstract = "Ramp-type Josephson junctions with highly doped PrBa2Cu3-xGaxO7-δ barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO3 substrate are observed. The Ga segregation is responsible for the deviating electrical behavior as expected from extrapolation of low doping levels (x=0.1-0.4). The Ga diffusion in the ion-milled substrate, and possibly in the base electrode, may hamper Josephson junction fabrication using substituted REBa2Cu3O7-δ materials (RE=rare earth)",

author = "K. Verbist and O.I. Lebedev and \{van Tendeloo\}, G. and M.A.J. Verhoeven and A.J.H.M. Rijnders and D.H.A. Blank and H. Rogalla",

year = "1997",

doi = "10.1063/1.118515",

language = "English",

volume = "70",

pages = "1167--1169",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Ga segregation in DyBa2Cu3O7-δ/PrBa2Cu3-xGaO7-δ/DyBa2Cu3O7-δ ramp-type Josephson junctions

AU - Verbist, K.

AU - Lebedev, O.I.

AU - van Tendeloo, G.

AU - Verhoeven, M.A.J.

AU - Rijnders, A.J.H.M.

AU - Blank, D.H.A.

AU - Rogalla, H.

PY - 1997

Y1 - 1997

N2 - Ramp-type Josephson junctions with highly doped PrBa2Cu3-xGaxO7-δ barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO3 substrate are observed. The Ga segregation is responsible for the deviating electrical behavior as expected from extrapolation of low doping levels (x=0.1-0.4). The Ga diffusion in the ion-milled substrate, and possibly in the base electrode, may hamper Josephson junction fabrication using substituted REBa2Cu3O7-δ materials (RE=rare earth)

AB - Ramp-type Josephson junctions with highly doped PrBa2Cu3-xGaxO7-δ barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO3 substrate are observed. The Ga segregation is responsible for the deviating electrical behavior as expected from extrapolation of low doping levels (x=0.1-0.4). The Ga diffusion in the ion-milled substrate, and possibly in the base electrode, may hamper Josephson junction fabrication using substituted REBa2Cu3O7-δ materials (RE=rare earth)

U2 - 10.1063/1.118515

DO - 10.1063/1.118515

M3 - Article

SN - 0003-6951

VL - 70

SP - 1167

EP - 1169

JO - Applied physics letters

JF - Applied physics letters

IS - 9

ER -

Ga segregation in DyBa2Cu3O7-δ/PrBa2Cu3-xGaO7-δ/DyBa2Cu3O7-δ ramp-type Josephson junctions

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Ga segregation in DyBa₂Cu₃O_7-δ/PrBa₂Cu_3-xGaO_7-δ/DyBa₂Cu₃O_7-δ ramp-type Josephson junctions