Gain characterization of lattice-engineered potassium double tungstate thin film with 57.5 at. % ytterbium concentration for optical interconnects

Yean Sheng Yong, S. Aravazhi, Sergio Andrés Vázquez-Córdova, Sonia Maria García Blanco, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageEnglish
Title of host publicationIEEE Photonics Society Benelux Chapter
Place of PublicationEnschede
Pages59-62
Publication statusPublished - 3 Nov 2014
Event19th Annual Symposium of the IEEE Photonics Benelux Chapter 2014 - University of Twente, Enschede, Netherlands
Duration: 3 Nov 20144 Nov 2014
Conference number: 19
http://www.photonics-benelux.org/symp14/

Conference

Conference19th Annual Symposium of the IEEE Photonics Benelux Chapter 2014
CountryNetherlands
CityEnschede
Period3/11/144/11/14
Internet address

Keywords

  • METIS-307798

Cite this

Yong, Y. S., Aravazhi, S., Vázquez-Córdova, S. A., García Blanco, S. M., & Pollnau, M. (2014). Gain characterization of lattice-engineered potassium double tungstate thin film with 57.5 at. % ytterbium concentration for optical interconnects. In IEEE Photonics Society Benelux Chapter (pp. 59-62). Enschede.