GaP/Si heterojunction solar cells

Christopher T. Chen; Rebecca Saive; Hal S. Emmer; Shaul Aloni; Harry A. Atwater

doi:10.1109/PVSC.2015.7356244

GaP/Si heterojunction solar cells

Christopher T. Chen, Rebecca Saive, Hal S. Emmer, Shaul Aloni, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

The world record efficiency and open circuit voltage for crystalline silicon solar cells are held by a-Si/Si heterojunction devices. While a-Si provides excellent surface passivation, these heterojunction devices are limited by non-ideal optical and electronic properties. Gallium phosphide is a candidate material for replacing a-Si in a heterojunction device, promising lower parasitic absorption and better carrier mobilities. In this work, we present our results in growing high quality GaP thin films directly on Si using a two-step nucleation and growth scheme with metalorganic chemical vapor deposition, characterization, and x-ray photoelectron spectroscopy band offset measurements toward realizing a GaP/Si heterojunction device.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	IEEE
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356244
Publication status	Published - 14 Dec 2015
Externally published	Yes
Event	42nd IEEE Photovoltaic Specialists Conference, PVSC 2015 - Hyatt Regency New Orleans, New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 Conference number: 42 http://www.ieee-pvsc.org/PVSC42/

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference	42nd IEEE Photovoltaic Specialists Conference, PVSC 2015
Abbreviated title	PVSC
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15
Internet address	http://www.ieee-pvsc.org/PVSC42/

Keywords

gallium phosphide
heterojunctions
photovoltaic cells
silicon

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2015.7356244

Cite this

@inproceedings{906077bd93c84d149e118fee8e9a7d6c,

title = "GaP/Si heterojunction solar cells",

abstract = "The world record efficiency and open circuit voltage for crystalline silicon solar cells are held by a-Si/Si heterojunction devices. While a-Si provides excellent surface passivation, these heterojunction devices are limited by non-ideal optical and electronic properties. Gallium phosphide is a candidate material for replacing a-Si in a heterojunction device, promising lower parasitic absorption and better carrier mobilities. In this work, we present our results in growing high quality GaP thin films directly on Si using a two-step nucleation and growth scheme with metalorganic chemical vapor deposition, characterization, and x-ray photoelectron spectroscopy band offset measurements toward realizing a GaP/Si heterojunction device.",

keywords = "gallium phosphide, heterojunctions, photovoltaic cells, silicon",

author = "Chen, {Christopher T.} and Rebecca Saive and Emmer, {Hal S.} and Shaul Aloni and Atwater, {Harry A.}",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356244",

language = "English",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "IEEE",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

address = "United States",

note = "42nd IEEE Photovoltaic Specialists Conference, PVSC 2015, PVSC ; Conference date: 14-06-2015 Through 19-06-2015",

url = "http://www.ieee-pvsc.org/PVSC42/",

}

Chen, CT, Saive, R, Emmer, HS, Aloni, S & Atwater, HA 2015, GaP/Si heterojunction solar cells. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356244, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, IEEE, 42nd IEEE Photovoltaic Specialists Conference, PVSC 2015, New Orleans, Louisiana, United States, 14/06/15. https://doi.org/10.1109/PVSC.2015.7356244

TY - GEN

T1 - GaP/Si heterojunction solar cells

AU - Chen, Christopher T.

AU - Saive, Rebecca

AU - Emmer, Hal S.

AU - Aloni, Shaul

AU - Atwater, Harry A.

N1 - Conference code: 42

PY - 2015/12/14

Y1 - 2015/12/14

N2 - The world record efficiency and open circuit voltage for crystalline silicon solar cells are held by a-Si/Si heterojunction devices. While a-Si provides excellent surface passivation, these heterojunction devices are limited by non-ideal optical and electronic properties. Gallium phosphide is a candidate material for replacing a-Si in a heterojunction device, promising lower parasitic absorption and better carrier mobilities. In this work, we present our results in growing high quality GaP thin films directly on Si using a two-step nucleation and growth scheme with metalorganic chemical vapor deposition, characterization, and x-ray photoelectron spectroscopy band offset measurements toward realizing a GaP/Si heterojunction device.

AB - The world record efficiency and open circuit voltage for crystalline silicon solar cells are held by a-Si/Si heterojunction devices. While a-Si provides excellent surface passivation, these heterojunction devices are limited by non-ideal optical and electronic properties. Gallium phosphide is a candidate material for replacing a-Si in a heterojunction device, promising lower parasitic absorption and better carrier mobilities. In this work, we present our results in growing high quality GaP thin films directly on Si using a two-step nucleation and growth scheme with metalorganic chemical vapor deposition, characterization, and x-ray photoelectron spectroscopy band offset measurements toward realizing a GaP/Si heterojunction device.

KW - gallium phosphide

KW - heterojunctions

KW - photovoltaic cells

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84961637925&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2015.7356244

DO - 10.1109/PVSC.2015.7356244

M3 - Conference contribution

AN - SCOPUS:84961637925

T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - IEEE

T2 - 42nd IEEE Photovoltaic Specialists Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

GaP/Si heterojunction solar cells

Abstract

Publication series

Conference

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this