GaP/Si heterojunction solar cells

Christopher T. Chen, Rebecca Saive, Hal S. Emmer, Shaul Aloni, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

The world record efficiency and open circuit voltage for crystalline silicon solar cells are held by a-Si/Si heterojunction devices. While a-Si provides excellent surface passivation, these heterojunction devices are limited by non-ideal optical and electronic properties. Gallium phosphide is a candidate material for replacing a-Si in a heterojunction device, promising lower parasitic absorption and better carrier mobilities. In this work, we present our results in growing high quality GaP thin films directly on Si using a two-step nucleation and growth scheme with metalorganic chemical vapor deposition, characterization, and x-ray photoelectron spectroscopy band offset measurements toward realizing a GaP/Si heterojunction device.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherIEEE
ISBN (Electronic)9781479979448
DOIs
Publication statusPublished - 14 Dec 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialists Conference, PVSC 2015 - Hyatt Regency New Orleans, New Orleans, United States
Duration: 14 Jun 201519 Jun 2015
Conference number: 42
http://www.ieee-pvsc.org/PVSC42/

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference42nd IEEE Photovoltaic Specialists Conference, PVSC 2015
Abbreviated titlePVSC
CountryUnited States
CityNew Orleans
Period14/06/1519/06/15
Internet address

Keywords

  • gallium phosphide
  • heterojunctions
  • photovoltaic cells
  • silicon

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