GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Rebecca Saive; Hal Emmer; Christopher T Chen; Chaomin Zhang; Christiana Honsberg; Harry Atwater

doi:10.1109/PVSC.2018.8547704

GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Rebecca Saive, Hal Emmer, Christopher T Chen, Chaomin Zhang, Christiana Honsberg, Harry Atwater

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)
Subtitle of host publication	(A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
Publisher	IEEE
Pages	64-69
Number of pages	6
ISBN (Electronic)	978-1-5386-8529-7
DOIs	https://doi.org/10.1109/PVSC.2018.8547704
Publication status	Published - Aug 2018
Externally published	Yes
Event	45th IEEE Photovoltaic Specialists Conference, PVSC 2018 - Hilton Waikoloa Village Resort, Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018 Conference number: 45 http://www.ieee-pvsc.org/WCPEC-7/

Conference

Conference	45th IEEE Photovoltaic Specialists Conference, PVSC 2018
Abbreviated title	PVSC
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18
Internet address	http://www.ieee-pvsc.org/WCPEC-7/

Keywords

Gallium Phosphide
Silicon heterojunction
band alignment
doping
morphology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2018.8547704

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@inproceedings{9623e512c95b4400b7e5dc9005a1e4c4,

title = "GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study",

abstract = "We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.",

keywords = "Gallium Phosphide, Silicon heterojunction, band alignment, doping, morphology",

author = "Rebecca Saive and Hal Emmer and Chen, {Christopher T} and Chaomin Zhang and Christiana Honsberg and Harry Atwater",

year = "2018",

month = aug,

doi = "10.1109/PVSC.2018.8547704",

language = "English",

pages = "64--69",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)",

publisher = "IEEE",

address = "United States",

note = "45th IEEE Photovoltaic Specialists Conference, PVSC 2018, PVSC ; Conference date: 10-06-2018 Through 15-06-2018",

url = "http://www.ieee-pvsc.org/WCPEC-7/",

}

Saive, R, Emmer, H, Chen, CT, Zhang, C, Honsberg, C & Atwater, H 2018, GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC): (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, pp. 64-69, 45th IEEE Photovoltaic Specialists Conference, PVSC 2018, Waikoloa Village, Hawaii, United States, 10/06/18. https://doi.org/10.1109/PVSC.2018.8547704

GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study. / Saive, Rebecca; Emmer, Hal; Chen, Christopher T et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC): (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. p. 64-69.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

AU - Saive, Rebecca

AU - Emmer, Hal

AU - Chen, Christopher T

AU - Zhang, Chaomin

AU - Honsberg, Christiana

AU - Atwater, Harry

N1 - Conference code: 45

PY - 2018/8

Y1 - 2018/8

N2 - We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.

AB - We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.

KW - Gallium Phosphide

KW - Silicon heterojunction

KW - band alignment

KW - doping

KW - morphology

UR - http://www.scopus.com/inward/record.url?scp=85059907014&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8547704

DO - 10.1109/PVSC.2018.8547704

M3 - Conference contribution

SP - 64

EP - 69

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)

PB - IEEE

T2 - 45th IEEE Photovoltaic Specialists Conference, PVSC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Abstract

Conference

Keywords

UN SDGs

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