GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Rebecca Saive, Hal Emmer, Christopher T Chen, Chaomin Zhang, Christiana Honsberg, Harry Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.
Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)
Subtitle of host publication(A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
PublisherIEEE
Pages64-69
Number of pages6
ISBN (Electronic)978-1-5386-8529-7
DOIs
Publication statusPublished - Aug 2018
Externally publishedYes
Event45th IEEE Photovoltaic Specialists Conference, PVSC 2018 - Hilton Waikoloa Village Resort, Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018
Conference number: 45
http://www.ieee-pvsc.org/WCPEC-7/

Conference

Conference45th IEEE Photovoltaic Specialists Conference, PVSC 2018
Abbreviated titlePVSC
CountryUnited States
CityWaikoloa Village
Period10/06/1815/06/18
Internet address

Keywords

  • Gallium Phosphide
  • Silicon heterojunction
  • band alignment
  • doping
  • morphology

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