Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface

Lei Liang; Juan Shan; Qihong Chen; Jianming Lu; Graeme R. Blake; Thom T.M.  Palstra; Gerrit E.W. Bauer; B.J. van Wees; Jianting Ye

doi:10.1103/PhysRevB.98.134402

Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface

Lei Liang, Juan Shan, Qihong Chen, Jianming Lu, Graeme R. Blake, Thom T.M. Palstra, Gerrit E.W. Bauer (Corresponding Author), B.J. van Wees, Jianting Ye (Corresponding Author)

Research output: Contribution to journal › Article › Academic › peer-review

5 Citations (Scopus)

66 Downloads (Pure)

Abstract

We report an electric-field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.

Original language	English
Article number	134402
Journal	Physical review B: Covering condensed matter and materials physics
Volume	98
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevB.98.134402
Publication status	Published - 1 Oct 2018
Externally published	Yes

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10.1103/PhysRevB.98.134402

PhysRevB.98.134402Final published version, 2.12 MBLicence: Taverne

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title = "Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface",

abstract = "We report an electric-field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.",

author = "Lei Liang and Juan Shan and Qihong Chen and Jianming Lu and Blake, {Graeme R.} and Palstra, {Thom T.M.} and Bauer, {Gerrit E.W.} and {van Wees}, B.J. and Jianting Ye",

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language = "English",

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Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface. / Liang, Lei; Shan, Juan; Chen, Qihong; Lu, Jianming; Blake, Graeme R.; Palstra, Thom T.M. ; Bauer, Gerrit E.W. (Corresponding Author); van Wees, B.J.; Ye, Jianting (Corresponding Author).

In: Physical review B: Covering condensed matter and materials physics, Vol. 98, No. 13, 134402 , 01.10.2018.

Research output: Contribution to journal › Article › Academic › peer-review

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T1 - Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface

AU - Liang, Lei

AU - Shan, Juan

AU - Chen, Qihong

AU - Lu, Jianming

AU - Blake, Graeme R.

AU - Palstra, Thom T.M.

AU - Bauer, Gerrit E.W.

AU - van Wees, B.J.

AU - Ye, Jianting

PY - 2018/10/1

Y1 - 2018/10/1

N2 - We report an electric-field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.

AB - We report an electric-field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.

U2 - 10.1103/PhysRevB.98.134402

DO - 10.1103/PhysRevB.98.134402

M3 - Article

VL - 98

JO - Physical review B: Covering condensed matter and materials physics

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SN - 2469-9950

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