Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface

Lei Liang, Juan Shan, Qihong Chen, Jianming Lu, Graeme R. Blake, Thom T.M. Palstra, Gerrit E.W. Bauer (Corresponding Author), B.J. van Wees, Jianting Ye (Corresponding Author)

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)
66 Downloads (Pure)

Abstract

We report an electric-field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.
Original languageEnglish
Article number134402
JournalPhysical review B: Covering condensed matter and materials physics
Volume98
Issue number13
DOIs
Publication statusPublished - 1 Oct 2018
Externally publishedYes

Fingerprint Dive into the research topics of 'Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface'. Together they form a unique fingerprint.

Cite this