Gate-drain Capacitance Compensation technique for triode MOS transconductors

    Research output: Contribution to journalArticleAcademicpeer-review

    2 Citations (Scopus)
    Original languageUndefined
    Pages (from-to)114-115
    Number of pages2
    JournalElectronics letters
    Volume27
    Issue number2
    Publication statusPublished - 1991

    Keywords

    • METIS-111631

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