Gate oxide reliability and deuterated CMOS processing

A.J. Hof; A. Kovalgin; R. van Schaijk; W.M. Baks; J. Schmitz

doi:10.1109/IRWS.2004.1422727

Gate oxide reliability and deuterated CMOS processing

A.J. Hof, A. Kovalgin, R. van Schaijk, W.M. Baks, J. Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show that the hot carrier degradation only benefits from an isotope effect when deuterium is introduced in the post metal anneal. At the same time, charge to breakdown for high quality oxides does not benefit from an isotope effect, regardless of the processing stage deuterium is introduced, or the gate oxide thickness used. This is verified on two different sets of wafers fabricated in two different laboratories.

Original language	English
Title of host publication	IEEE Integrated Reliability Workshop 2004
Place of Publication	Piscataway, NJ
Publisher	IEEE Computer Society
Pages	7-10
Number of pages	4
ISBN (Print)	0-7803-8517-9
DOIs	https://doi.org/10.1109/IRWS.2004.1422727
Publication status	Published - 25 Apr 2004
Event	IEEE Integrated Reliability Workshop 2004 - South Lake Tahoe, United States Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	IEEE Integrated Reliability Workshop 2004
Country/Territory	United States
City	South Lake Tahoe
Period	18/10/04 → 21/10/04

Keywords

MIS devices
CMOS integrated circuits
Deuterium
Dielectric thin films
Annealing

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10.1109/IRWS.2004.1422727

2004_proc_irw_hofSubmitted version, 91.1 KBLicence: Unspecified

Cite this

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title = "Gate oxide reliability and deuterated CMOS processing",

abstract = "In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show that the hot carrier degradation only benefits from an isotope effect when deuterium is introduced in the post metal anneal. At the same time, charge to breakdown for high quality oxides does not benefit from an isotope effect, regardless of the processing stage deuterium is introduced, or the gate oxide thickness used. This is verified on two different sets of wafers fabricated in two different laboratories.",

keywords = "MIS devices, CMOS integrated circuits, Deuterium, Dielectric thin films, Annealing",

author = "A.J. Hof and A. Kovalgin and {van Schaijk}, R. and W.M. Baks and J. Schmitz",

year = "2004",

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doi = "10.1109/IRWS.2004.1422727",

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TY - GEN

T1 - Gate oxide reliability and deuterated CMOS processing

AU - Hof, A.J.

AU - Kovalgin, A.

AU - van Schaijk, R.

AU - Baks, W.M.

AU - Schmitz, J.

PY - 2004/4/25

Y1 - 2004/4/25

N2 - In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show that the hot carrier degradation only benefits from an isotope effect when deuterium is introduced in the post metal anneal. At the same time, charge to breakdown for high quality oxides does not benefit from an isotope effect, regardless of the processing stage deuterium is introduced, or the gate oxide thickness used. This is verified on two different sets of wafers fabricated in two different laboratories.

AB - In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show that the hot carrier degradation only benefits from an isotope effect when deuterium is introduced in the post metal anneal. At the same time, charge to breakdown for high quality oxides does not benefit from an isotope effect, regardless of the processing stage deuterium is introduced, or the gate oxide thickness used. This is verified on two different sets of wafers fabricated in two different laboratories.

KW - MIS devices

KW - CMOS integrated circuits

KW - Deuterium

KW - Dielectric thin films

KW - Annealing

U2 - 10.1109/IRWS.2004.1422727

DO - 10.1109/IRWS.2004.1422727

M3 - Conference contribution

SN - 0-7803-8517-9

SP - 7

EP - 10

BT - IEEE Integrated Reliability Workshop 2004

PB - IEEE Computer Society

CY - Piscataway, NJ

T2 - IEEE Integrated Reliability Workshop 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Gate oxide reliability and deuterated CMOS processing

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