Gate oxide reliability and deuterated CMOS processing

A.J. Hof, A. Kovalgin, R. van Schaijk, W.M. Baks, J. Schmitz

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    Abstract

    In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show that the hot carrier degradation only benefits from an isotope effect when deuterium is introduced in the post metal anneal. At the same time, charge to breakdown for high quality oxides does not benefit from an isotope effect, regardless of the processing stage deuterium is introduced, or the gate oxide thickness used. This is verified on two different sets of wafers fabricated in two different laboratories.
    Original languageEnglish
    Title of host publicationIEEE Integrated Reliability Workshop 2004
    Place of PublicationPiscataway, NJ
    PublisherIEEE Computer Society
    Pages7-10
    Number of pages4
    ISBN (Print)0-7803-8517-9
    DOIs
    Publication statusPublished - 25 Apr 2004
    EventIEEE Integrated Reliability Workshop 2004 - South Lake Tahoe, United States
    Duration: 18 Oct 200421 Oct 2004

    Conference

    ConferenceIEEE Integrated Reliability Workshop 2004
    CountryUnited States
    CitySouth Lake Tahoe
    Period18/10/0421/10/04

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    Keywords

    • MIS devices
    • CMOS integrated circuits
    • Deuterium
    • Dielectric thin films
    • Annealing

    Cite this

    Hof, A. J., Kovalgin, A., van Schaijk, R., Baks, W. M., & Schmitz, J. (2004). Gate oxide reliability and deuterated CMOS processing. In IEEE Integrated Reliability Workshop 2004 (pp. 7-10). Piscataway, NJ: IEEE Computer Society. https://doi.org/10.1109/IRWS.2004.1422727