Abstract
| Original language | English |
|---|---|
| Title of host publication | IEEE Integrated Reliability Workshop 2004 |
| Place of Publication | Piscataway, NJ |
| Publisher | IEEE Computer Society |
| Pages | 7-10 |
| Number of pages | 4 |
| ISBN (Print) | 0-7803-8517-9 |
| DOIs | |
| Publication status | Published - 25 Apr 2004 |
| Event | IEEE Integrated Reliability Workshop 2004 - South Lake Tahoe, United States Duration: 18 Oct 2004 → 21 Oct 2004 |
Conference
| Conference | IEEE Integrated Reliability Workshop 2004 |
|---|---|
| Country | United States |
| City | South Lake Tahoe |
| Period | 18/10/04 → 21/10/04 |
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Keywords
- MIS devices
- CMOS integrated circuits
- Deuterium
- Dielectric thin films
- Annealing
Cite this
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Gate oxide reliability and deuterated CMOS processing. / Hof, A.J.; Kovalgin, A.; van Schaijk, R.; Baks, W.M.; Schmitz, J.
IEEE Integrated Reliability Workshop 2004. Piscataway, NJ : IEEE Computer Society, 2004. p. 7-10.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Gate oxide reliability and deuterated CMOS processing
AU - Hof, A.J.
AU - Kovalgin, A.
AU - van Schaijk, R.
AU - Baks, W.M.
AU - Schmitz, J.
PY - 2004/4/25
Y1 - 2004/4/25
N2 - In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show that the hot carrier degradation only benefits from an isotope effect when deuterium is introduced in the post metal anneal. At the same time, charge to breakdown for high quality oxides does not benefit from an isotope effect, regardless of the processing stage deuterium is introduced, or the gate oxide thickness used. This is verified on two different sets of wafers fabricated in two different laboratories.
AB - In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show that the hot carrier degradation only benefits from an isotope effect when deuterium is introduced in the post metal anneal. At the same time, charge to breakdown for high quality oxides does not benefit from an isotope effect, regardless of the processing stage deuterium is introduced, or the gate oxide thickness used. This is verified on two different sets of wafers fabricated in two different laboratories.
KW - MIS devices
KW - CMOS integrated circuits
KW - Deuterium
KW - Dielectric thin films
KW - Annealing
U2 - 10.1109/IRWS.2004.1422727
DO - 10.1109/IRWS.2004.1422727
M3 - Conference contribution
SN - 0-7803-8517-9
SP - 7
EP - 10
BT - IEEE Integrated Reliability Workshop 2004
PB - IEEE Computer Society
CY - Piscataway, NJ
ER -