Gate oxide reliability for deep submicron PMOS Si and GeSi gate technologies

C. Salm, J.H. Klootwijk, Y.V. Ponomarev, P.W.M. Boos, D.J. Gravesteijn

    Research output: Other contributionOther research output

    Original languageEnglish
    Place of PublicationEnschede, the Netherlands
    Publication statusPublished - 23 Jun 1998

    Keywords

    • METIS-114924

    Cite this