Gate Oxide Reliabily for Deep Submicron PMOS Si and GeSi Gate Technologies

Cora Salm, J.H. Klootwijk, Y.V. Ponomarev, P.W.M. Boos, D.J. Gravesteijn, P.H. Woerlee

    Research output: Other contributionOther research output

    Original languageUndefined
    Place of PublicationMierlo, the Netherlands
    Publication statusPublished - 26 Nov 1998

    Keywords

    • METIS-114892

    Cite this