Gate-Tunable Band Structure of the LaAlO3-SrTi O3 Interface

A.E.M. Smink, J.C. de Boer, M.P. Stehno, A. Brinkman, W.G. van der Wiel, H. Hilgenkamp

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Abstract

The two-dimensional electron system at the interface between LaAlO3 and SrTiO3 has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observe a Lifshitz transition at a density of 2.9×1013cm-2. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex-oxide interfaces.

Original languageEnglish
Article number106401
JournalPhysical review letters
Volume118
Issue number10
DOIs
Publication statusPublished - 6 Mar 2017

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