Gate-tunable transport properties of in situ capped Bi2Te3 topological insulator thin films

Prosper Ngabonziza, Martin P. Stehno, Hiroaki Myoren, Viola A. Neumann, Gertjan Koster, Alexander Brinkman

Research output: Contribution to journalArticleAcademicpeer-review

12 Citations (Scopus)
2 Downloads (Pure)

Abstract

Combining of the ability to prepare high-quality, intrinsic Bi2Te3 topological insulator thin films of low carrier density with in situ protective capping, a pronounced, gate-tunable change in transport properties of Bi2Te3 thin films is demonstrated. Using a back gate, the carrier density is tuned by a factor of ≈7 in an Al2O3 capped Bi2Te3 sample and by a factor of ≈2 in Te capped Bi2Te3 films. Full depletion of bulk carriers is achieved, which allows access to the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, the presence of two coherent conduction channels associated with the two decoupled surfaces is observed. The magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way toward the implementation of a variety of topological quantum devices.
Original languageEnglish
Article number1600157
Pages (from-to)-
Number of pages9
JournalAdvanced electronic materials
Volume2
Issue number8
DOIs
Publication statusPublished - 2016

Fingerprint

Surface states
Fermi level
Transport properties
Carrier concentration
Galvanomagnetic effects
Thin films
Electrostatics
Energy gap
Tuning
Experiments

Cite this

Ngabonziza, Prosper ; Stehno, Martin P. ; Myoren, Hiroaki ; Neumann, Viola A. ; Koster, Gertjan ; Brinkman, Alexander. / Gate-tunable transport properties of in situ capped Bi2Te3 topological insulator thin films. In: Advanced electronic materials. 2016 ; Vol. 2, No. 8. pp. -.
@article{2004eb1d3164450f801c07296da8d277,
title = "Gate-tunable transport properties of in situ capped Bi2Te3 topological insulator thin films",
abstract = "Combining of the ability to prepare high-quality, intrinsic Bi2Te3 topological insulator thin films of low carrier density with in situ protective capping, a pronounced, gate-tunable change in transport properties of Bi2Te3 thin films is demonstrated. Using a back gate, the carrier density is tuned by a factor of ≈7 in an Al2O3 capped Bi2Te3 sample and by a factor of ≈2 in Te capped Bi2Te3 films. Full depletion of bulk carriers is achieved, which allows access to the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, the presence of two coherent conduction channels associated with the two decoupled surfaces is observed. The magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way toward the implementation of a variety of topological quantum devices.",
author = "Prosper Ngabonziza and Stehno, {Martin P.} and Hiroaki Myoren and Neumann, {Viola A.} and Gertjan Koster and Alexander Brinkman",
year = "2016",
doi = "10.1002/aelm.201600157",
language = "English",
volume = "2",
pages = "--",
journal = "Advanced electronic materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",
number = "8",

}

Gate-tunable transport properties of in situ capped Bi2Te3 topological insulator thin films. / Ngabonziza, Prosper; Stehno, Martin P.; Myoren, Hiroaki; Neumann, Viola A.; Koster, Gertjan; Brinkman, Alexander.

In: Advanced electronic materials, Vol. 2, No. 8, 1600157, 2016, p. -.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Gate-tunable transport properties of in situ capped Bi2Te3 topological insulator thin films

AU - Ngabonziza, Prosper

AU - Stehno, Martin P.

AU - Myoren, Hiroaki

AU - Neumann, Viola A.

AU - Koster, Gertjan

AU - Brinkman, Alexander

PY - 2016

Y1 - 2016

N2 - Combining of the ability to prepare high-quality, intrinsic Bi2Te3 topological insulator thin films of low carrier density with in situ protective capping, a pronounced, gate-tunable change in transport properties of Bi2Te3 thin films is demonstrated. Using a back gate, the carrier density is tuned by a factor of ≈7 in an Al2O3 capped Bi2Te3 sample and by a factor of ≈2 in Te capped Bi2Te3 films. Full depletion of bulk carriers is achieved, which allows access to the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, the presence of two coherent conduction channels associated with the two decoupled surfaces is observed. The magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way toward the implementation of a variety of topological quantum devices.

AB - Combining of the ability to prepare high-quality, intrinsic Bi2Te3 topological insulator thin films of low carrier density with in situ protective capping, a pronounced, gate-tunable change in transport properties of Bi2Te3 thin films is demonstrated. Using a back gate, the carrier density is tuned by a factor of ≈7 in an Al2O3 capped Bi2Te3 sample and by a factor of ≈2 in Te capped Bi2Te3 films. Full depletion of bulk carriers is achieved, which allows access to the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, the presence of two coherent conduction channels associated with the two decoupled surfaces is observed. The magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way toward the implementation of a variety of topological quantum devices.

U2 - 10.1002/aelm.201600157

DO - 10.1002/aelm.201600157

M3 - Article

VL - 2

SP - -

JO - Advanced electronic materials

JF - Advanced electronic materials

SN - 2199-160X

IS - 8

M1 - 1600157

ER -