Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor

A. Sammak, W. B. De Boer, L. K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Abstract

A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the main precursor gas for Ge deposition; and 0.7% diluted AsH3 and B2H6 precursor gases as well as a TriMethylGallium (TMGa) bubbler system for As, B and Ga doping of epitaxial Ge, respectively. The quality of Ge epitaxy on Si is investigated by plan-view and cross-sectional transmission electron-microscopy (TEM) and atomic-force microscopy (AFM) analysis.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages507-512
Number of pages6
Edition9
DOIs
Publication statusPublished - 1 Dec 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium 2012 - Honolulu, United States
Duration: 7 Oct 201212 Oct 2012
Conference number: 5

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium 2012
CountryUnited States
CityHonolulu
Period7/10/1212/10/12
OtherHeld at the 220th ECS Meeting

Fingerprint

Epitaxial growth
Chemical vapor deposition
Single crystals
Defect density
Dislocations (crystals)
Gases
Merging
Atomic force microscopy
Doping (additives)
Transmission electron microscopy

Cite this

Sammak, A., De Boer, W. B., & Nanver, L. K. (2012). Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 507-512). (ECS Transactions; Vol. 50, No. 9). https://doi.org/10.1149/05009.0507ecst
Sammak, A. ; De Boer, W. B. ; Nanver, L. K. / Ge-on-Si : Single-crystal selective epitaxial growth in a CVD reactor. SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. 2012. pp. 507-512 (ECS Transactions; 9).
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Sammak, A, De Boer, WB & Nanver, LK 2012, Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, pp. 507-512, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium 2012, Honolulu, United States, 7/10/12. https://doi.org/10.1149/05009.0507ecst

Ge-on-Si : Single-crystal selective epitaxial growth in a CVD reactor. / Sammak, A.; De Boer, W. B.; Nanver, L. K.

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. 2012. p. 507-512 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Sammak A, De Boer WB, Nanver LK. Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. 2012. p. 507-512. (ECS Transactions; 9). https://doi.org/10.1149/05009.0507ecst