Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor

A. Sammak, W. B. De Boer, L. K. Nanver

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    8 Citations (Scopus)

    Abstract

    A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the main precursor gas for Ge deposition; and 0.7% diluted AsH3 and B2H6 precursor gases as well as a TriMethylGallium (TMGa) bubbler system for As, B and Ga doping of epitaxial Ge, respectively. The quality of Ge epitaxy on Si is investigated by plan-view and cross-sectional transmission electron-microscopy (TEM) and atomic-force microscopy (AFM) analysis.

    Original languageEnglish
    Title of host publicationSiGe, Ge, and Related Compounds 5
    Subtitle of host publicationMaterials, Processing, and Devices
    Pages507-512
    Number of pages6
    Edition9
    DOIs
    Publication statusPublished - 1 Dec 2012
    Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium 2012 - Honolulu, United States
    Duration: 7 Oct 201212 Oct 2012
    Conference number: 5

    Publication series

    NameECS Transactions
    Number9
    Volume50
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Conference

    Conference5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium 2012
    CountryUnited States
    CityHonolulu
    Period7/10/1212/10/12
    OtherHeld at the 220th ECS Meeting

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