Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor

A. Sammak; W.B. de Boer; L.K. Nanver

doi:10.1149/05009.0507ecst

Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor

A. Sammak, W.B. de Boer, L.K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

11 Citations (Scopus)

6 Downloads (Pure)

Abstract

A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH₄ as the main precursor gas for Ge deposition; and 0.7% diluted AsH₃ and B₂H₆ precursor gases as well as a TriMethylGallium (TMGa) bubbler system for As, B and Ga doping of epitaxial Ge, respectively. The quality of Ge epitaxy on Si is investigated by plan-view and cross-sectional transmission electron-microscopy (TEM) and atomic-force microscopy (AFM) analysis.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Pages	507-512
Number of pages	6
Edition	9
DOIs	https://doi.org/10.1149/05009.0507ecst
Publication status	Published - 1 Dec 2012
Externally published	Yes
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium 2012 - Honolulu, United States Duration: 7 Oct 2012 → 12 Oct 2012 Conference number: 5

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium 2012
Country/Territory	United States
City	Honolulu
Period	7/10/12 → 12/10/12
Other	Held at the 220th ECS Meeting

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title = "Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor",

abstract = "A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the main precursor gas for Ge deposition; and 0.7% diluted AsH3 and B2H6 precursor gases as well as a TriMethylGallium (TMGa) bubbler system for As, B and Ga doping of epitaxial Ge, respectively. The quality of Ge epitaxy on Si is investigated by plan-view and cross-sectional transmission electron-microscopy (TEM) and atomic-force microscopy (AFM) analysis.",

author = "A. Sammak and {de Boer}, W.B. and L.K. Nanver",

year = "2012",

month = dec,

day = "1",

doi = "10.1149/05009.0507ecst",

language = "English",

isbn = "9781607683575",

series = "ECS Transactions",

number = "9",

pages = "507--512",

booktitle = "SiGe, Ge, and Related Compounds 5",

edition = "9",

note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium 2012 ; Conference date: 07-10-2012 Through 12-10-2012",

}

Sammak, A, de Boer, WB & Nanver, LK 2012, Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, pp. 507-512, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium 2012, Honolulu, Hawaii, United States, 7/10/12. https://doi.org/10.1149/05009.0507ecst

TY - GEN

T1 - Ge-on-Si

T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium 2012

AU - Sammak, A.

AU - de Boer, W.B.

AU - Nanver, L.K.

N1 - Conference code: 5

PY - 2012/12/1

Y1 - 2012/12/1

N2 - A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the main precursor gas for Ge deposition; and 0.7% diluted AsH3 and B2H6 precursor gases as well as a TriMethylGallium (TMGa) bubbler system for As, B and Ga doping of epitaxial Ge, respectively. The quality of Ge epitaxy on Si is investigated by plan-view and cross-sectional transmission electron-microscopy (TEM) and atomic-force microscopy (AFM) analysis.

AB - A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the main precursor gas for Ge deposition; and 0.7% diluted AsH3 and B2H6 precursor gases as well as a TriMethylGallium (TMGa) bubbler system for As, B and Ga doping of epitaxial Ge, respectively. The quality of Ge epitaxy on Si is investigated by plan-view and cross-sectional transmission electron-microscopy (TEM) and atomic-force microscopy (AFM) analysis.

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U2 - 10.1149/05009.0507ecst

DO - 10.1149/05009.0507ecst

M3 - Conference contribution

AN - SCOPUS:84885828524

SN - 9781607683575

T3 - ECS Transactions

SP - 507

EP - 512

BT - SiGe, Ge, and Related Compounds 5

Y2 - 7 October 2012 through 12 October 2012

ER -

Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor

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