Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs

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Abstract

This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-?m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V
Original languageEnglish
Pages (from-to)1032-1040
Number of pages9
JournalIEEE journal of solid-state circuits
Volume36
Issue number7
DOIs
Publication statusPublished - Jul 2001
Event26th European Solid-State Circuits Conference, ESSCIRC 2000 - Stockholm, Sweden
Duration: 19 Sep 200021 Sep 2000
Conference number: 26

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MOSFET devices
Broadband amplifiers
Noise figure
Networks (circuits)
Electric potential
Electric power utilization

Keywords

  • LNAs
  • systematic generation
  • variable-gain amplifier
  • wide-band amplifier
  • voltage-controlled current source
  • CODEN-IJSCBC
  • EWI-14344
  • METIS-202757
  • IR-42725
  • Low noise amplifiers
  • VCCS

Cite this

@article{3876e4720efc47a3984b0dad9fa9dc84,
title = "Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs",
abstract = "This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-?m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V",
keywords = "LNAs, systematic generation, variable-gain amplifier, wide-band amplifier, voltage-controlled current source, CODEN-IJSCBC, EWI-14344, METIS-202757, IR-42725, Low noise amplifiers, VCCS",
author = "F. Bruccoleri and Klumperink, {Eric A.M.} and Bram Nauta",
year = "2001",
month = "7",
doi = "10.1109/4.933458",
language = "English",
volume = "36",
pages = "1032--1040",
journal = "IEEE journal of solid-state circuits",
issn = "0018-9200",
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Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs. / Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram.

In: IEEE journal of solid-state circuits, Vol. 36, No. 7, 07.2001, p. 1032-1040.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Klumperink, Eric A.M.

AU - Nauta, Bram

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AB - This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-?m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V

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KW - METIS-202757

KW - IR-42725

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