Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs

F. Bruccoleri; Eric A.M. Klumperink; Bram Nauta

doi:10.1109/4.933458

Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs

F. Bruccoleri, Eric A.M. Klumperink, Bram Nauta

Research output: Contribution to journal › Article › Academic › peer-review

64 Citations (Scopus)

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Abstract

This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-?m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V

Original language	English
Pages (from-to)	1032-1040
Number of pages	9
Journal	IEEE journal of solid-state circuits
Volume	36
Issue number	7
DOIs	https://doi.org/10.1109/4.933458
Publication status	Published - Jul 2001
Event	26th European Solid-State Circuits Conference, ESSCIRC 2000 - Stockholm, Sweden Duration: 19 Sep 2000 → 21 Sep 2000 Conference number: 26

Keywords

LNAs
systematic generation
variable-gain amplifier
wide-band amplifier
voltage-controlled current source
CODEN-IJSCBC
EWI-14344
METIS-202757
IR-42725
Low noise amplifiers
VCCS

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10.1109/4.933458

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title = "Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs",

abstract = "This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-?m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V",

keywords = "LNAs, systematic generation, variable-gain amplifier, wide-band amplifier, voltage-controlled current source, CODEN-IJSCBC, EWI-14344, METIS-202757, IR-42725, Low noise amplifiers, VCCS",

author = "F. Bruccoleri and Klumperink, {Eric A.M.} and Bram Nauta",

year = "2001",

month = jul,

doi = "10.1109/4.933458",

language = "English",

volume = "36",

pages = "1032--1040",

journal = "IEEE journal of solid-state circuits",

issn = "0018-9200",

publisher = "IEEE",

number = "7",

note = "26th European Solid-State Circuits Conference, ESSCIRC 2000, ESSCIRC ; Conference date: 19-09-2000 Through 21-09-2000",

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TY - JOUR

T1 - Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs

AU - Bruccoleri, F.

AU - Klumperink, Eric A.M.

AU - Nauta, Bram

N1 - Conference code: 26

PY - 2001/7

Y1 - 2001/7

N2 - This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-?m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V

AB - This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-?m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V

KW - LNAs

KW - systematic generation

KW - variable-gain amplifier

KW - wide-band amplifier

KW - voltage-controlled current source

KW - CODEN-IJSCBC

KW - EWI-14344

KW - METIS-202757

KW - IR-42725

KW - Low noise amplifiers

KW - VCCS

U2 - 10.1109/4.933458

DO - 10.1109/4.933458

M3 - Article

VL - 36

SP - 1032

EP - 1040

JO - IEEE journal of solid-state circuits

JF - IEEE journal of solid-state circuits

SN - 0018-9200

IS - 7

T2 - 26th European Solid-State Circuits Conference, ESSCIRC 2000

Y2 - 19 September 2000 through 21 September 2000

ER -

Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs

Abstract

Keywords

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