Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 1032-1040 |
| Number of pages | 9 |
| Journal | IEEE journal of solid-state circuits |
| Volume | 36 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 2001 |
| Event | 26th European Solid-State Circuits Conference, ESSCIRC 2000 - Stockholm, Sweden Duration: 19 Sep 2000 → 21 Sep 2000 Conference number: 26 |
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Keywords
- LNAs
- systematic generation
- variable-gain amplifier
- wide-band amplifier
- voltage-controlled current source
- CODEN-IJSCBC
- EWI-14344
- METIS-202757
- IR-42725
- Low noise amplifiers
- VCCS
Cite this
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Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs. / Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram.
In: IEEE journal of solid-state circuits, Vol. 36, No. 7, 07.2001, p. 1032-1040.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs
AU - Bruccoleri, F.
AU - Klumperink, Eric A.M.
AU - Nauta, Bram
PY - 2001/7
Y1 - 2001/7
N2 - This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-?m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V
AB - This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-?m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V
KW - LNAs
KW - systematic generation
KW - variable-gain amplifier
KW - wide-band amplifier
KW - voltage-controlled current source
KW - CODEN-IJSCBC
KW - EWI-14344
KW - METIS-202757
KW - IR-42725
KW - Low noise amplifiers
KW - VCCS
U2 - 10.1109/4.933458
DO - 10.1109/4.933458
M3 - Article
VL - 36
SP - 1032
EP - 1040
JO - IEEE journal of solid-state circuits
JF - IEEE journal of solid-state circuits
SN - 0018-9200
IS - 7
ER -