Abstract
We demonstrate the generation of frequency combs with a low repetition rate of 450 MHz, using a hybrid integrated InP-Si3N4 diode laser with more than 60 cm optical roundtrip length on-chip. Comb generation is achieved without a saturable absorber, based on four-wave mixing in combination with gain-index coupling and spectrally filtered feedback; both passive and active mode-locking is observed. External modulation reduces the RF linewidth from several hundreds of kHz to the ten-kHz level.
Original language | English |
---|---|
Publication status | Published - 16 Sept 2022 |
Event | European Semiconductor Laser Workshop 2022 - Neuchatel, Switzerland Duration: 16 Sept 2022 → 17 Sept 2022 |
Conference
Conference | European Semiconductor Laser Workshop 2022 |
---|---|
Abbreviated title | ESLW |
Country/Territory | Switzerland |
City | Neuchatel |
Period | 16/09/22 → 17/09/22 |
Keywords
- semiconductor laser
- hybrid integrated diode laser
- frequency comb
- repetition rate