Generation of low repetition rate frequency combs with a hybrid integrated InP-Si3N4 diode laser

Anzal Memon*, Albert van Rees, J. Mak, Youwen Fan, P.J.M. van der Slot, H.M.J. Bastiaens, K.-J. Boller

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

We demonstrate the generation of frequency combs with a low repetition rate of 450 MHz, using a hybrid integrated InP-Si3N4 diode laser with more than 60 cm optical roundtrip length on-chip. Comb generation is achieved without a saturable absorber, based on four-wave mixing in combination with gain-index coupling and spectrally filtered feedback; both passive and active mode-locking is observed. External modulation reduces the RF linewidth from several hundreds of kHz to the ten-kHz level.
Original languageEnglish
Publication statusPublished - 16 Sept 2022
EventEuropean Semiconductor Laser Workshop 2022 - Neuchatel, Switzerland
Duration: 16 Sept 202217 Sept 2022

Conference

ConferenceEuropean Semiconductor Laser Workshop 2022
Abbreviated titleESLW
Country/TerritorySwitzerland
CityNeuchatel
Period16/09/2217/09/22

Keywords

  • semiconductor laser
  • hybrid integrated diode laser
  • frequency comb
  • repetition rate

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