Generation of low repetition rate frequency combs with a hybrid integrated InP-Si3N4 diode laser

Anzal Memon; Albert van Rees; J. Mak; Youwen  Fan; P.J.M. van der Slot; H.M.J. Bastiaens; K.-J. Boller

Generation of low repetition rate frequency combs with a hybrid integrated InP-Si3N4 diode laser

Anzal Memon^*
, Albert van Rees
, J. Mak
, Youwen Fan
, P.J.M. van der Slot
, H.M.J. Bastiaens
, K.-J. Boller

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

We demonstrate the generation of frequency combs with a low repetition rate of 450 MHz, using a hybrid integrated InP-Si3N4 diode laser with more than 60 cm optical roundtrip length on-chip. Comb generation is achieved without a saturable absorber, based on four-wave mixing in combination with gain-index coupling and spectrally filtered feedback; both passive and active mode-locking is observed. External modulation reduces the RF linewidth from several hundreds of kHz to the ten-kHz level.

Original language	English
Publication status	Published - 16 Sept 2022
Event	European Semiconductor Laser Workshop 2022 - Neuchatel, Switzerland Duration: 16 Sept 2022 → 17 Sept 2022

Conference

Conference	European Semiconductor Laser Workshop 2022
Abbreviated title	ESLW
Country/Territory	Switzerland
City	Neuchatel
Period	16/09/22 → 17/09/22

Keywords

semiconductor laser
hybrid integrated diode laser
frequency comb
repetition rate

Cite this

@conference{faf431f368eb4ed8bc3e26c7a4f41517,

title = "Generation of low repetition rate frequency combs with a hybrid integrated InP-Si3N4 diode laser",

abstract = "We demonstrate the generation of frequency combs with a low repetition rate of 450 MHz, using a hybrid integrated InP-Si3N4 diode laser with more than 60 cm optical roundtrip length on-chip. Comb generation is achieved without a saturable absorber, based on four-wave mixing in combination with gain-index coupling and spectrally filtered feedback; both passive and active mode-locking is observed. External modulation reduces the RF linewidth from several hundreds of kHz to the ten-kHz level.",

keywords = "semiconductor laser, hybrid integrated diode laser, frequency comb, repetition rate",

author = "Anzal Memon and \{van Rees\}, Albert and J. Mak and Youwen Fan and \{van der Slot\}, P.J.M. and H.M.J. Bastiaens and K.-J. Boller",

year = "2022",

month = sep,

day = "16",

language = "English",

note = "European Semiconductor Laser Workshop 2022, ESLW ; Conference date: 16-09-2022 Through 17-09-2022",

}

TY - CONF

T1 - Generation of low repetition rate frequency combs with a hybrid integrated InP-Si3N4 diode laser

AU - Memon, Anzal

AU - van Rees, Albert

AU - Mak, J.

AU - Fan, Youwen

AU - van der Slot, P.J.M.

AU - Bastiaens, H.M.J.

AU - Boller, K.-J.

PY - 2022/9/16

Y1 - 2022/9/16

N2 - We demonstrate the generation of frequency combs with a low repetition rate of 450 MHz, using a hybrid integrated InP-Si3N4 diode laser with more than 60 cm optical roundtrip length on-chip. Comb generation is achieved without a saturable absorber, based on four-wave mixing in combination with gain-index coupling and spectrally filtered feedback; both passive and active mode-locking is observed. External modulation reduces the RF linewidth from several hundreds of kHz to the ten-kHz level.

AB - We demonstrate the generation of frequency combs with a low repetition rate of 450 MHz, using a hybrid integrated InP-Si3N4 diode laser with more than 60 cm optical roundtrip length on-chip. Comb generation is achieved without a saturable absorber, based on four-wave mixing in combination with gain-index coupling and spectrally filtered feedback; both passive and active mode-locking is observed. External modulation reduces the RF linewidth from several hundreds of kHz to the ten-kHz level.

KW - semiconductor laser

KW - hybrid integrated diode laser

KW - frequency comb

KW - repetition rate

M3 - Paper

T2 - European Semiconductor Laser Workshop 2022

Y2 - 16 September 2022 through 17 September 2022

ER -

Generation of low repetition rate frequency combs with a hybrid integrated InP-Si3N4 diode laser

Abstract

Conference

Keywords

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Cite this