Geometrical scaling effects on carrier transport in ultrthin-body MOSFETs

J.P.J. van der Steen

doi:10.3990/1.9789036531580

Geometrical scaling effects on carrier transport in ultrthin-body MOSFETs

J.P.J. van der Steen

Research output: Thesis › PhD Thesis - Research UT, graduation UT

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Abstract

In this chapter, shifts in valence and conduction band edge have been extracted from the temperature dependence of the subthreshold current. This method, in the spirit of the procedure for extraction of the activation energy in BJT’s, is adapted and applied for the first time to quantify shifts in the conduction and valence band edge originating from carrier confinement in UTB SOI devices.

Original language	Undefined
Awarding Institution	University of Twente
Supervisors/Advisors	Schmitz, Jurriaan , Supervisor Hueting, Ray, Advisor Selmi, L., Supervisor, External person
Thesis sponsors	NXP Eindhoven
Award date	1 Apr 2011
Place of Publication	Enschede
Publisher	Gildeprint Drukkerijen
Print ISBNs	978-90-365-3158-0
DOIs	https://doi.org/10.3990/1.9789036531580
Publication status	Published - 1 Apr 2011

Keywords

IR-76483
EWI-20194
METIS-277651

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10.3990/1.9789036531580

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Cite this

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abstract = "In this chapter, shifts in valence and conduction band edge have been extracted from the temperature dependence of the subthreshold current. This method, in the spirit of the procedure for extraction of the activation energy in BJT{\textquoteright}s, is adapted and applied for the first time to quantify shifts in the conduction and valence band edge originating from carrier confinement in UTB SOI devices.",

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KW - METIS-277651

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DO - 10.3990/1.9789036531580

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