Geometrical scaling effects on carrier transport in ultrthin-body MOSFETs

J.P.J. van der Steen

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    127 Downloads (Pure)

    Abstract

    In this chapter, shifts in valence and conduction band edge have been extracted from the temperature dependence of the subthreshold current. This method, in the spirit of the procedure for extraction of the activation energy in BJT’s, is adapted and applied for the first time to quantify shifts in the conduction and valence band edge originating from carrier confinement in UTB SOI devices.
    Original languageUndefined
    Awarding Institution
    • University of Twente
    Supervisors/Advisors
    • Schmitz, Jurriaan, Supervisor
    • Hueting, Ray, Advisor
    • Selmi, L., Supervisor, External person
    Thesis sponsors
    Award date1 Apr 2011
    Place of PublicationEnschede
    Publisher
    Print ISBNs978-90-365-3158-0
    DOIs
    Publication statusPublished - 1 Apr 2011

    Keywords

    • IR-76483
    • EWI-20194
    • METIS-277651

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