In this chapter, shifts in valence and conduction band edge have been extracted from the temperature dependence of the subthreshold current. This method, in the spirit of the procedure for extraction of the activation energy in BJT’s, is adapted and applied for the first time to quantify shifts in the conduction and valence band edge originating from carrier confinement in UTB SOI devices.
|Award date||1 Apr 2011|
|Place of Publication||Enschede|
|Publication status||Published - 1 Apr 2011|