Germanium-Silicon, the future gate material for sub 0.25 um MOSFETs 2. About the device properties

Cora Salm, D.T. van Veen, Jurriaan Schmitz, P.H. Woerlee

    Research output: Other contribution › Other research output

    Original languageUndefined
    Place of PublicationVeldhoven
    Publication statusPublished - 20 Dec 1995

    Keywords

    • METIS-114874

    Cite this