Germanium-Silicon, the future gate material for sub 0.25 um MOSFETs 1. About the material properties

Cora Salm, D.T. van Veen, Jurriaan Schmitz, P.H. Woerlee

    Research output: Other contributionOther research output

    Original languageUndefined
    Place of PublicationVeldhoven
    Publication statusPublished - 20 Dec 1995

    Keywords

    • METIS-114875

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