| Original language | Undefined |
|---|---|
| Place of Publication | Veldhoven |
| Publication status | Published - 20 Dec 1995 |
Keywords
- METIS-114874
Germanium-Silicon, the future gate material for sub 0.25 um MOSFETs 2. About the device properties
- Cora Salm
- , D.T. van Veen
- , Jurriaan Schmitz
- , P.H. Woerlee
Research output: Other contribution › Other research output