Green laser crystallization of α-Si films using preformed α-Si Lines

I. Brunets, J. Holleman, Alexeij Y. Kovalgin, Antonius A.I. Aarnink, A. Boogaard, Peter Oesterlin, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    4 Citations (Scopus)


    Low thermal budgets are required to realize 3-D integrated circuits (IC) such as e.g. stacked memory devices. For a better performance of circuit components, an additional improvement of low temperature silicon films is needed. Numerous crystallization techniques can provide polysilicon films with sufficiently large grains [1-3]. However, due to the uncontrollable formation of grain boundaries one can expect a strong variation of the device parameters. Although many techniques are capable of providing a sufficient control over crystal grains and grain boundaries, they require complicated additional process steps such as e.g. air-gap formation [2], seed formation in underlying material for the locationcontrolled grain growth [3], etc. This makes those techniques hardly applicable.
    Original languageEnglish
    Title of host publicationThin Film Transistor Technology 8
    EditorsYue Kuo
    PublisherThe Electrochemical Society Inc.
    Number of pages7
    ISBN (Print)1-56677-508-6
    Publication statusPublished - 29 Oct 2006
    Event8th Symposium on Thin Film Transistor Technologies, TFTT 2006 - Cancun, Mexico
    Duration: 29 Oct 20063 Nov 2006
    Conference number: 8

    Publication series

    NameECS Transactions 3, 8 (2006)
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737


    Conference8th Symposium on Thin Film Transistor Technologies, TFTT 2006
    Abbreviated titleTFTT


    • SC-ICF: Integrated Circuit Fabrication
    • IR-61702
    • METIS-237704
    • EWI-8406


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