Green laser crystallization of α-Si films using preformed α-Si Lines

I. Brunets; J. Holleman; Alexeij Y. Kovalgin; Antonius A.I. Aarnink; A. Boogaard; Peter Oesterlin; Jurriaan Schmitz

doi:10.1149/1.2356353

Green laser crystallization of α-Si films using preformed α-Si Lines

I. Brunets, J. Holleman, Alexeij Y. Kovalgin, Antonius A.I. Aarnink, A. Boogaard, Peter Oesterlin, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

1 Downloads (Pure)

Abstract

Low thermal budgets are required to realize 3-D integrated circuits (IC) such as e.g. stacked memory devices. For a better performance of circuit components, an additional improvement of low temperature silicon films is needed. Numerous crystallization techniques can provide polysilicon films with sufficiently large grains [1-3]. However, due to the uncontrollable formation of grain boundaries one can expect a strong variation of the device parameters. Although many techniques are capable of providing a sufficient control over crystal grains and grain boundaries, they require complicated additional process steps such as e.g. air-gap formation [2], seed formation in underlying material for the locationcontrolled grain growth [3], etc. This makes those techniques hardly applicable.

Original language	English
Title of host publication	Thin Film Transistor Technology 8
Editors	Yue Kuo
Publisher	Electrochemical Society
Pages	185-191
Number of pages	7
ISBN (Print)	1-56677-508-6
DOIs	https://doi.org/10.1149/1.2356353
Publication status	Published - 29 Oct 2006
Event	8th Symposium on Thin Film Transistor Technologies, TFTT 2006 - Cancun, Mexico Duration: 29 Oct 2006 → 3 Nov 2006 Conference number: 8

Publication series

Name	ECS Transactions 3, 8 (2006)
Publisher	ECS
Number	10
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	8th Symposium on Thin Film Transistor Technologies, TFTT 2006
Abbreviated title	TFTT
Country/Territory	Mexico
City	Cancun
Period	29/10/06 → 3/11/06

Keywords

SC-ICF: Integrated Circuit Fabrication
IR-61702
METIS-237704
EWI-8406

Access to Document

10.1149/1.2356353

http://eprints.eemcs.utwente.nl/secure2/8406/01/ECS_210th_Meeting-2006-Brunets.pdf

Cite this

@inproceedings{57e072abe76f4d2a8180c5c6656524c3,

title = "Green laser crystallization of α-Si films using preformed α-Si Lines",

abstract = "Low thermal budgets are required to realize 3-D integrated circuits (IC) such as e.g. stacked memory devices. For a better performance of circuit components, an additional improvement of low temperature silicon films is needed. Numerous crystallization techniques can provide polysilicon films with sufficiently large grains [1-3]. However, due to the uncontrollable formation of grain boundaries one can expect a strong variation of the device parameters. Although many techniques are capable of providing a sufficient control over crystal grains and grain boundaries, they require complicated additional process steps such as e.g. air-gap formation [2], seed formation in underlying material for the locationcontrolled grain growth [3], etc. This makes those techniques hardly applicable.",

keywords = "SC-ICF: Integrated Circuit Fabrication, IR-61702, METIS-237704, EWI-8406",

author = "I. Brunets and J. Holleman and Kovalgin, \{Alexeij Y.\} and Aarnink, \{Antonius A.I.\} and A. Boogaard and Peter Oesterlin and Jurriaan Schmitz",

note = "210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico ; 8th Symposium on Thin Film Transistor Technologies, TFTT 2006, TFTT ; Conference date: 29-10-2006 Through 03-11-2006",

year = "2006",

month = oct,

day = "29",

doi = "10.1149/1.2356353",

language = "English",

isbn = "1-56677-508-6",

series = "ECS Transactions 3, 8 (2006)",

publisher = "Electrochemical Society",

number = "10",

pages = "185--191",

editor = "Yue Kuo",

booktitle = "Thin Film Transistor Technology 8",

address = "United States",

}

Brunets, I, Holleman, J, Kovalgin, AY , Aarnink, AAI, Boogaard, A, Oesterlin, P & Schmitz, J 2006, Green laser crystallization of α-Si films using preformed α-Si Lines. in Y Kuo (ed.), Thin Film Transistor Technology 8. ECS Transactions 3, 8 (2006), no. 10, vol. 3, Electrochemical Society, pp. 185-191, 8th Symposium on Thin Film Transistor Technologies, TFTT 2006, Cancun, Mexico, 29/10/06. https://doi.org/10.1149/1.2356353

Green laser crystallization of α-Si films using preformed α-Si Lines. / Brunets, I.; Holleman, J.; Kovalgin, Alexeij Y. et al.
Thin Film Transistor Technology 8. ed. / Yue Kuo. Electrochemical Society, 2006. p. 185-191 (ECS Transactions 3, 8 (2006); Vol. 3, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Green laser crystallization of α-Si films using preformed α-Si Lines

AU - Brunets, I.

AU - Holleman, J.

AU - Kovalgin, Alexeij Y.

AU - Aarnink, Antonius A.I.

AU - Boogaard, A.

AU - Oesterlin, Peter

AU - Schmitz, Jurriaan

N1 - Conference code: 8

PY - 2006/10/29

Y1 - 2006/10/29

N2 - Low thermal budgets are required to realize 3-D integrated circuits (IC) such as e.g. stacked memory devices. For a better performance of circuit components, an additional improvement of low temperature silicon films is needed. Numerous crystallization techniques can provide polysilicon films with sufficiently large grains [1-3]. However, due to the uncontrollable formation of grain boundaries one can expect a strong variation of the device parameters. Although many techniques are capable of providing a sufficient control over crystal grains and grain boundaries, they require complicated additional process steps such as e.g. air-gap formation [2], seed formation in underlying material for the locationcontrolled grain growth [3], etc. This makes those techniques hardly applicable.

AB - Low thermal budgets are required to realize 3-D integrated circuits (IC) such as e.g. stacked memory devices. For a better performance of circuit components, an additional improvement of low temperature silicon films is needed. Numerous crystallization techniques can provide polysilicon films with sufficiently large grains [1-3]. However, due to the uncontrollable formation of grain boundaries one can expect a strong variation of the device parameters. Although many techniques are capable of providing a sufficient control over crystal grains and grain boundaries, they require complicated additional process steps such as e.g. air-gap formation [2], seed formation in underlying material for the locationcontrolled grain growth [3], etc. This makes those techniques hardly applicable.

KW - SC-ICF: Integrated Circuit Fabrication

KW - IR-61702

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KW - EWI-8406

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DO - 10.1149/1.2356353

M3 - Conference contribution

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T3 - ECS Transactions 3, 8 (2006)

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EP - 191

BT - Thin Film Transistor Technology 8

A2 - Kuo, Yue

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T2 - 8th Symposium on Thin Film Transistor Technologies, TFTT 2006

Y2 - 29 October 2006 through 3 November 2006

ER -

Green laser crystallization of α-Si films using preformed α-Si Lines

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Keywords

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