Green Laser Crystallization of GeSi thin Films and Dopant Activation

B. Rangarajan, I. Brunets, Peter Oesterlin, Alexeij Y. Kovalgin, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


    Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.
    Original languageEnglish
    Title of host publication219th ECS Meeting Transactions
    PublisherThe Electrochemical Society Inc.
    Number of pages9
    Publication statusPublished - 1 May 2011
    Event219th ECS Meeting - The Palais des Congres de Montreal, Montreal, QC, Canada
    Duration: 1 May 20116 May 2011
    Conference number: 219

    Publication series

    PublisherThe Electrochemical Society
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737


    Conference219th ECS Meeting
    CityMontreal, QC


    • METIS-277731
    • EWI-20361
    • IR-77757

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    Rangarajan, B., Brunets, I., Oesterlin, P., Kovalgin, A. Y., & Schmitz, J. (2011). Green Laser Crystallization of GeSi thin Films and Dopant Activation. In 219th ECS Meeting Transactions (pp. 17-25). The Electrochemical Society Inc..