Green Laser Crystallization of GeSi thin Films and Dopant Activation

B. Rangarajan, I. Brunets, Peter Oesterlin, Alexeij Y. Kovalgin, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.
Original languageEnglish
Title of host publication219th ECS Meeting Transactions
PublisherThe Electrochemical Society Inc.
Pages17-25
Number of pages9
DOIs
Publication statusPublished - 1 May 2011
Event219th ECS Meeting - The Palais des Congres de Montreal, Montreal, QC, Canada
Duration: 1 May 20116 May 2011
Conference number: 219

Publication series

Name
PublisherThe Electrochemical Society
Number2
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

Fingerprint

activation
crystallization
thin films
lasers
annealing
laser annealing
ellipsometry
furnaces
topography
x rays
grain boundaries
photoelectron spectroscopy
atomic force microscopy
transmission electron microscopy
scanning electron microscopy
scanning
diffraction
crystals
ions

Keywords

  • METIS-277731
  • EWI-20361
  • IR-77757

Cite this

Rangarajan, B., Brunets, I., Oesterlin, P., Kovalgin, A. Y., & Schmitz, J. (2011). Green Laser Crystallization of GeSi thin Films and Dopant Activation. In 219th ECS Meeting Transactions (pp. 17-25). The Electrochemical Society Inc.. https://doi.org/10.1149/1.3568844
Rangarajan, B. ; Brunets, I. ; Oesterlin, Peter ; Kovalgin, Alexeij Y. ; Schmitz, Jurriaan. / Green Laser Crystallization of GeSi thin Films and Dopant Activation. 219th ECS Meeting Transactions. The Electrochemical Society Inc., 2011. pp. 17-25
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title = "Green Laser Crystallization of GeSi thin Films and Dopant Activation",
abstract = "Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.",
keywords = "METIS-277731, EWI-20361, IR-77757",
author = "B. Rangarajan and I. Brunets and Peter Oesterlin and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",
note = "219th ECS meeting Transactions, 1-6 May 2011, Montreal, QC, Canada",
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Rangarajan, B, Brunets, I, Oesterlin, P, Kovalgin, AY & Schmitz, J 2011, Green Laser Crystallization of GeSi thin Films and Dopant Activation. in 219th ECS Meeting Transactions. The Electrochemical Society Inc., pp. 17-25, 219th ECS Meeting, Montreal, QC, Canada, 1/05/11. https://doi.org/10.1149/1.3568844

Green Laser Crystallization of GeSi thin Films and Dopant Activation. / Rangarajan, B.; Brunets, I.; Oesterlin, Peter; Kovalgin, Alexeij Y.; Schmitz, Jurriaan.

219th ECS Meeting Transactions. The Electrochemical Society Inc., 2011. p. 17-25.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - Green Laser Crystallization of GeSi thin Films and Dopant Activation

AU - Rangarajan, B.

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AU - Schmitz, Jurriaan

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N2 - Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.

AB - Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.

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Rangarajan B, Brunets I, Oesterlin P, Kovalgin AY, Schmitz J. Green Laser Crystallization of GeSi thin Films and Dopant Activation. In 219th ECS Meeting Transactions. The Electrochemical Society Inc. 2011. p. 17-25 https://doi.org/10.1149/1.3568844