Green Laser Crystallization of GeSi thin Films and Dopant Activation

B. Rangarajan, I. Brunets, Peter Oesterlin, Alexeij Y. Kovalgin, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.
    Original languageEnglish
    Title of host publication219th ECS Meeting Transactions
    PublisherThe Electrochemical Society Inc.
    Pages17-25
    Number of pages9
    DOIs
    Publication statusPublished - 1 May 2011
    Event219th ECS Meeting - The Palais des Congres de Montreal, Montreal, QC, Canada
    Duration: 1 May 20116 May 2011
    Conference number: 219

    Publication series

    Name
    PublisherThe Electrochemical Society
    Number2
    Volume35
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Conference

    Conference219th ECS Meeting
    CountryCanada
    CityMontreal, QC
    Period1/05/116/05/11

    Fingerprint

    activation
    crystallization
    thin films
    lasers
    annealing
    laser annealing
    ellipsometry
    furnaces
    topography
    x rays
    grain boundaries
    photoelectron spectroscopy
    atomic force microscopy
    transmission electron microscopy
    scanning electron microscopy
    scanning
    diffraction
    crystals
    ions

    Keywords

    • METIS-277731
    • EWI-20361
    • IR-77757

    Cite this

    Rangarajan, B., Brunets, I., Oesterlin, P., Kovalgin, A. Y., & Schmitz, J. (2011). Green Laser Crystallization of GeSi thin Films and Dopant Activation. In 219th ECS Meeting Transactions (pp. 17-25). The Electrochemical Society Inc.. https://doi.org/10.1149/1.3568844
    Rangarajan, B. ; Brunets, I. ; Oesterlin, Peter ; Kovalgin, Alexeij Y. ; Schmitz, Jurriaan. / Green Laser Crystallization of GeSi thin Films and Dopant Activation. 219th ECS Meeting Transactions. The Electrochemical Society Inc., 2011. pp. 17-25
    @inproceedings{e83bf1e514e94a4c8c41d87339616c93,
    title = "Green Laser Crystallization of GeSi thin Films and Dopant Activation",
    abstract = "Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.",
    keywords = "METIS-277731, EWI-20361, IR-77757",
    author = "B. Rangarajan and I. Brunets and Peter Oesterlin and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",
    note = "219th ECS meeting Transactions, 1-6 May 2011, Montreal, QC, Canada",
    year = "2011",
    month = "5",
    day = "1",
    doi = "10.1149/1.3568844",
    language = "English",
    publisher = "The Electrochemical Society Inc.",
    number = "2",
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    Rangarajan, B, Brunets, I, Oesterlin, P, Kovalgin, AY & Schmitz, J 2011, Green Laser Crystallization of GeSi thin Films and Dopant Activation. in 219th ECS Meeting Transactions. The Electrochemical Society Inc., pp. 17-25, 219th ECS Meeting, Montreal, QC, Canada, 1/05/11. https://doi.org/10.1149/1.3568844

    Green Laser Crystallization of GeSi thin Films and Dopant Activation. / Rangarajan, B.; Brunets, I.; Oesterlin, Peter; Kovalgin, Alexeij Y.; Schmitz, Jurriaan.

    219th ECS Meeting Transactions. The Electrochemical Society Inc., 2011. p. 17-25.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    T1 - Green Laser Crystallization of GeSi thin Films and Dopant Activation

    AU - Rangarajan, B.

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    AU - Kovalgin, Alexeij Y.

    AU - Schmitz, Jurriaan

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    N2 - Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.

    AB - Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.

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    Rangarajan B, Brunets I, Oesterlin P, Kovalgin AY, Schmitz J. Green Laser Crystallization of GeSi thin Films and Dopant Activation. In 219th ECS Meeting Transactions. The Electrochemical Society Inc. 2011. p. 17-25 https://doi.org/10.1149/1.3568844