Green Laser Crystallization of GeSi thin Films and Dopant Activation

B. Rangarajan; I. Brunets; Peter Oesterlin; Alexeij Y. Kovalgin; Jurriaan Schmitz

doi:10.1149/1.3568844

Green Laser Crystallization of GeSi thin Films and Dopant Activation

B. Rangarajan, I. Brunets, Peter Oesterlin, Alexeij Y. Kovalgin, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.

Original language	English
Title of host publication	219th ECS Meeting Transactions
Publisher	Electrochemical Society
Pages	17-25
Number of pages	9
DOIs	https://doi.org/10.1149/1.3568844
Publication status	Published - 1 May 2011
Event	219th ECS Meeting - The Palais des Congres de Montreal, Montreal, QC, Canada Duration: 1 May 2011 → 6 May 2011 Conference number: 219

Publication series

Name
Publisher	The Electrochemical Society
Number	2
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	219th ECS Meeting
Country/Territory	Canada
City	Montreal, QC
Period	1/05/11 → 6/05/11

Keywords

METIS-277731
EWI-20361
IR-77757

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10.1149/1.3568844

http://eprints.eemcs.utwente.nl/secure2/20361/01/ECS_Balaji.pdf

Cite this

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title = "Green Laser Crystallization of GeSi thin Films and Dopant Activation",

abstract = "Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.",

keywords = "METIS-277731, EWI-20361, IR-77757",

author = "B. Rangarajan and I. Brunets and Peter Oesterlin and Kovalgin, \{Alexeij Y.\} and Jurriaan Schmitz",

note = "219th ECS meeting Transactions, 1-6 May 2011, Montreal, QC, Canada ; 219th ECS Meeting ; Conference date: 01-05-2011 Through 06-05-2011",

year = "2011",

month = may,

day = "1",

doi = "10.1149/1.3568844",

language = "English",

publisher = "Electrochemical Society",

number = "2",

pages = "17--25",

booktitle = "219th ECS Meeting Transactions",

address = "United States",

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TY - GEN

T1 - Green Laser Crystallization of GeSi thin Films and Dopant Activation

AU - Rangarajan, B.

AU - Brunets, I.

AU - Oesterlin, Peter

AU - Kovalgin, Alexeij Y.

AU - Schmitz, Jurriaan

N1 - Conference code: 219

PY - 2011/5/1

Y1 - 2011/5/1

N2 - Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.

AB - Laser-crystallization of amorphous Ge0.85Si0.15 films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 μm2) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly-Ge0.85Si0.15 films is compared after furnace annealing, rapid thermal annealing and green-laser annealing.

KW - METIS-277731

KW - EWI-20361

KW - IR-77757

U2 - 10.1149/1.3568844

DO - 10.1149/1.3568844

M3 - Conference contribution

SP - 17

EP - 25

BT - 219th ECS Meeting Transactions

PB - Electrochemical Society

T2 - 219th ECS Meeting

Y2 - 1 May 2011 through 6 May 2011

ER -

Green Laser Crystallization of GeSi thin Films and Dopant Activation

Abstract

Publication series

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Keywords

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