Growth and properties of LPCVD W-Si-N barrier layers

S. Bystrova; J. Holleman; P.H. Woerlee

doi:10.1016/S0167-9317(00)00447-0

Growth and properties of LPCVD W-Si-N barrier layers

S. Bystrova^*, J. Holleman, P.H. Woerlee

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W–Si–N compounds in the WF6–NF3–SiH4–Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250

Original language	English
Pages (from-to)	189-195
Number of pages	7
Journal	Microelectronic engineering
Volume	55
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(00)00447-0
Publication status	Published - 1 Mar 2001

Keywords

Copper metallization
LPCVD
Diffusion barrier
n/a OA procedure

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10.1016/S0167-9317(00)00447-0

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title = "Growth and properties of LPCVD W-Si-N barrier layers",

abstract = "In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W–Si–N compounds in the WF6–NF3–SiH4–Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250",

keywords = "Copper metallization, LPCVD, Diffusion barrier, n/a OA procedure",

author = "S. Bystrova and J. Holleman and P.H. Woerlee",

year = "2001",

month = mar,

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doi = "10.1016/S0167-9317(00)00447-0",

language = "English",

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journal = "Microelectronic engineering",

issn = "0167-9317",

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number = "1-4",

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TY - JOUR

T1 - Growth and properties of LPCVD W-Si-N barrier layers

AU - Bystrova, S.

AU - Holleman, J.

AU - Woerlee, P.H.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W–Si–N compounds in the WF6–NF3–SiH4–Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250

AB - In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W–Si–N compounds in the WF6–NF3–SiH4–Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250

KW - Copper metallization

KW - LPCVD

KW - Diffusion barrier

KW - n/a OA procedure

U2 - 10.1016/S0167-9317(00)00447-0

DO - 10.1016/S0167-9317(00)00447-0

M3 - Article

SN - 0167-9317

VL - 55

SP - 189

EP - 195

JO - Microelectronic engineering

JF - Microelectronic engineering

IS - 1-4

ER -

Growth and properties of LPCVD W-Si-N barrier layers

Abstract

Keywords

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