Growth and properties of LPCVD W-Si-N barrier layers

Svetlana Nikolajevna van Nieuwkasteele-Bystrova; J. Holleman; P.H. Woerlee

doi:10.1016/S0167-9317(00)00447-0

Growth and properties of LPCVD W-Si-N barrier layers

Svetlana Nikolajevna van Nieuwkasteele-Bystrova, J. Holleman, P.H. Woerlee

Research output: Contribution to journal › Article › Academic › peer-review

20 Citations (Scopus)

Abstract

In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W–Si–N compounds in the WF6–NF3–SiH4–Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250

Original language	Undefined
Article number	10.1016/S0167-9317(00)00447-0
Pages (from-to)	189-195
Number of pages	7
Journal	Microelectronic engineering
Volume	55
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(00)00447-0
Publication status	Published - 1 Mar 2001

Keywords

METIS-202112
IR-67772
Copper metallization
LPCVD
EWI-15616
Diffusion barrier

Access to Document

10.1016/S0167-9317(00)00447-0

http://eprints.eemcs.utwente.nl/secure2/15616/01/bystrova_micr_eng.pdf

Cite this

@article{87c1f9ac82f2441baa92a69b0eeb2cd1,

title = "Growth and properties of LPCVD W-Si-N barrier layers",

abstract = "In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W–Si–N compounds in the WF6–NF3–SiH4–Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250",

keywords = "METIS-202112, IR-67772, Copper metallization, LPCVD, EWI-15616, Diffusion barrier",

author = "{van Nieuwkasteele-Bystrova}, {Svetlana Nikolajevna} and J. Holleman and P.H. Woerlee",

year = "2001",

month = mar,

day = "1",

doi = "10.1016/S0167-9317(00)00447-0",

language = "Undefined",

volume = "55",

pages = "189--195",

journal = "Microelectronic engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Growth and properties of LPCVD W-Si-N barrier layers

AU - van Nieuwkasteele-Bystrova, Svetlana Nikolajevna

AU - Holleman, J.

AU - Woerlee, P.H.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W–Si–N compounds in the WF6–NF3–SiH4–Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250

AB - In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W–Si–N compounds in the WF6–NF3–SiH4–Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250

KW - METIS-202112

KW - IR-67772

KW - Copper metallization

KW - LPCVD

KW - EWI-15616

KW - Diffusion barrier

U2 - 10.1016/S0167-9317(00)00447-0

DO - 10.1016/S0167-9317(00)00447-0

M3 - Article

VL - 55

SP - 189

EP - 195

JO - Microelectronic engineering

JF - Microelectronic engineering

SN - 0167-9317

IS - 1-4

M1 - 10.1016/S0167-9317(00)00447-0

ER -