Growth and properties of LPCVD W-Si-N barrier layers

Svetlana Nikolajevna van Nieuwkasteele-Bystrova, J. Holleman, P.H. Woerlee

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20 Citations (Scopus)

Abstract

In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W–Si–N compounds in the WF6–NF3–SiH4–Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250
Original languageUndefined
Article number10.1016/S0167-9317(00)00447-0
Pages (from-to)189-195
Number of pages7
JournalMicroelectronic engineering
Volume55
Issue number1-4
DOIs
Publication statusPublished - 1 Mar 2001

Keywords

  • METIS-202112
  • IR-67772
  • Copper metallization
  • LPCVD
  • EWI-15616
  • Diffusion barrier

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