Abstract
In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W–Si–N compounds in the WF6–NF3–SiH4–Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250
Original language | Undefined |
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Article number | 10.1016/S0167-9317(00)00447-0 |
Pages (from-to) | 189-195 |
Number of pages | 7 |
Journal | Microelectronic engineering |
Volume | 55 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1 Mar 2001 |
Keywords
- METIS-202112
- IR-67772
- Copper metallization
- LPCVD
- EWI-15616
- Diffusion barrier