Growth and properties of subnanometer thin titanium nitride films

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    Abstract

    This research brings new insights into the relation between properties of ultra-thin conductive metal nitrides made by atomic layer deposition (ALD) and their possible industrial applications. The advantage of conductive nitrides over pure metals is (i) better established ALD processes allowing depositing high-quality films and (ii) the presence of nitrogen as an extra tool to manipulate the electron transport properties. In this work, we study titanium nitride (TiN) films with the aim to investigate the growth mechanism in combination with physical and electrical properties as a function of the layer thickness. In microelectronic devices, thin continuous TiN films are commonly used as diffusion barriers and metal gate material. Scaling electronic devices to nanometer dimensions requires a close look at electrical material properties as ultra-thin conductive materials encounter an insulating regime due to the depletion of carriers.
    Original languageEnglish
    Pages1
    Publication statusPublished - 10 Mar 2014

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    Keywords

    • EWI-25007
    • METIS-306003
    • IR-91694

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