Growth and properties of subnanometer thin titanium nitride films

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    Abstract

    This research brings new insights into the relation between properties of ultra-thin conductive metal nitrides made by atomic layer deposition (ALD) and their possible industrial applications. The advantage of conductive nitrides over pure metals is (i) better established ALD processes allowing depositing high-quality films and (ii) the presence of nitrogen as an extra tool to manipulate the electron transport properties. In this work, we study titanium nitride (TiN) films with the aim to investigate the growth mechanism in combination with physical and electrical properties as a function of the layer thickness. In microelectronic devices, thin continuous TiN films are commonly used as diffusion barriers and metal gate material. Scaling electronic devices to nanometer dimensions requires a close look at electrical material properties as ultra-thin conductive materials encounter an insulating regime due to the depletion of carriers.
    Original languageEnglish
    Pages1
    Publication statusPublished - 10 Mar 2014

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    titanium nitrides
    atomic layer epitaxy
    metal nitrides
    microelectronics
    encounters
    metals
    nitrides
    depletion
    physical properties
    transport properties
    electrical properties
    scaling
    nitrogen
    electronics
    electrons

    Keywords

    • EWI-25007
    • METIS-306003
    • IR-91694

    Cite this

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    title = "Growth and properties of subnanometer thin titanium nitride films",
    abstract = "This research brings new insights into the relation between properties of ultra-thin conductive metal nitrides made by atomic layer deposition (ALD) and their possible industrial applications. The advantage of conductive nitrides over pure metals is (i) better established ALD processes allowing depositing high-quality films and (ii) the presence of nitrogen as an extra tool to manipulate the electron transport properties. In this work, we study titanium nitride (TiN) films with the aim to investigate the growth mechanism in combination with physical and electrical properties as a function of the layer thickness. In microelectronic devices, thin continuous TiN films are commonly used as diffusion barriers and metal gate material. Scaling electronic devices to nanometer dimensions requires a close look at electrical material properties as ultra-thin conductive materials encounter an insulating regime due to the depletion of carriers.",
    keywords = "EWI-25007, METIS-306003, IR-91694",
    author = "Kovalgin, {Alexeij Y.} and {Van Hao}, B. and Jurriaan Schmitz and Wolters, {Robertus A.M.}",
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    day = "10",
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    TY - CONF

    T1 - Growth and properties of subnanometer thin titanium nitride films

    AU - Kovalgin, Alexeij Y.

    AU - Van Hao, B.

    AU - Schmitz, Jurriaan

    AU - Wolters, Robertus A.M.

    N1 - http://nanoandgiga.com/ngc2014/raw_abstracts/attached_abstracts/131110050724/abstract.pdf

    PY - 2014/3/10

    Y1 - 2014/3/10

    N2 - This research brings new insights into the relation between properties of ultra-thin conductive metal nitrides made by atomic layer deposition (ALD) and their possible industrial applications. The advantage of conductive nitrides over pure metals is (i) better established ALD processes allowing depositing high-quality films and (ii) the presence of nitrogen as an extra tool to manipulate the electron transport properties. In this work, we study titanium nitride (TiN) films with the aim to investigate the growth mechanism in combination with physical and electrical properties as a function of the layer thickness. In microelectronic devices, thin continuous TiN films are commonly used as diffusion barriers and metal gate material. Scaling electronic devices to nanometer dimensions requires a close look at electrical material properties as ultra-thin conductive materials encounter an insulating regime due to the depletion of carriers.

    AB - This research brings new insights into the relation between properties of ultra-thin conductive metal nitrides made by atomic layer deposition (ALD) and their possible industrial applications. The advantage of conductive nitrides over pure metals is (i) better established ALD processes allowing depositing high-quality films and (ii) the presence of nitrogen as an extra tool to manipulate the electron transport properties. In this work, we study titanium nitride (TiN) films with the aim to investigate the growth mechanism in combination with physical and electrical properties as a function of the layer thickness. In microelectronic devices, thin continuous TiN films are commonly used as diffusion barriers and metal gate material. Scaling electronic devices to nanometer dimensions requires a close look at electrical material properties as ultra-thin conductive materials encounter an insulating regime due to the depletion of carriers.

    KW - EWI-25007

    KW - METIS-306003

    KW - IR-91694

    M3 - Abstract

    SP - 1

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