Complex oxide materials form a technologically promising class of materials due to the wealth of physical properties they comprise. Using these materials in heteroepitaxial thin lm form, introduces challenging obstacles concerning the growth and results often in structures with unexpected physical properties. The structural discontinuity across the interface between the substrate and lm has a large eect on the nucleation, growth and nal atomic stacking. This thesis describes a study aiming at clearifying the atomic structure during and after growth of several complex oxide thin lm heteroepitaxial systems.
|Award date||7 Jun 2006|
|Place of Publication||Enschede|
|Publication status||Published - 7 Jun 2006|