This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the preferred orientation for piezoelectric applications. TEM shows the presence of a 4 nm thick semi-crystalline interface between silicon and the AlN layer. A basic growth mechanism is proposed from microstructural observations.
|Name||Springer Proceedings in Physics|
|Conference||14th Conference on Microscopy of Semiconducting Materials|
|Period||11/04/05 → 14/04/05|
|Other||April 11-14, 2005|
- Thin film