Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates

S. Saravanan; Enrico G. Keim; Gijsbertus J.M. Krijnen; Michael Curt Elwenspoek

doi:10.1007/3-540-31915-8_15

Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates

S. Saravanan, Enrico G. Keim, Gijsbertus J.M. Krijnen, Michael Curt Elwenspoek

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

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Abstract

This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the preferred orientation for piezoelectric applications. TEM shows the presence of a 4 nm thick semi-crystalline interface between silicon and the AlN layer. A basic growth mechanism is proposed from microstructural observations.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials
Subtitle of host publication	Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK
Editors	A.G. Cullis, J.L. Hutchison
Place of Publication	Berlin, Heidelberg
Publisher	Springer
Pages	75-78
Number of pages	4
ISBN (Electronic)	978-3-540-31915-3
ISBN (Print)	978-3-540-31914-6
DOIs	https://doi.org/10.1007/3-540-31915-8_15
Publication status	Published - Jul 2005
Event	14th Conference on Microscopy of Semiconducting Materials 2005 - Oxford, United Kingdom Duration: 11 Apr 2005 → 14 Apr 2005 Conference number: 14

Publication series

Name	Springer Proceedings in Physics
Publisher	Springer
Number	please ass/107
Volume	107
ISSN (Print)	0930-8989

Conference

Conference	14th Conference on Microscopy of Semiconducting Materials 2005
Country/Territory	United Kingdom
City	Oxford
Period	11/04/05 → 14/04/05

Keywords

AlN
RF-sputtering
Piezoelectric
Thin film

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10.1007/3-540-31915-8_15

Saravanan2005growthAccepted author version, 1.1 MB

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Saravanan, S., Keim, E. G., Krijnen, G. J. M., & Elwenspoek, M. C. (2005). Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates. In A. G. Cullis, & J. L. Hutchison (Eds.), Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK (pp. 75-78). (Springer Proceedings in Physics; Vol. 107, No. please ass/107). Springer. https://doi.org/10.1007/3-540-31915-8_15

Saravanan, S. ; Keim, Enrico G. ; Krijnen, Gijsbertus J.M. et al. / Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates. Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK. editor / A.G. Cullis ; J.L. Hutchison. Berlin, Heidelberg : Springer, 2005. pp. 75-78 (Springer Proceedings in Physics; please ass/107).

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abstract = "This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the preferred orientation for piezoelectric applications. TEM shows the presence of a 4 nm thick semi-crystalline interface between silicon and the AlN layer. A basic growth mechanism is proposed from microstructural observations.",

keywords = "AlN, RF-sputtering, Piezoelectric, Thin film",

author = "S. Saravanan and Keim, {Enrico G.} and Krijnen, {Gijsbertus J.M.} and Elwenspoek, {Michael Curt}",

year = "2005",

month = jul,

doi = "10.1007/3-540-31915-8_15",

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editor = "A.G. Cullis and J.L. Hutchison",

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Saravanan, S, Keim, EG, Krijnen, GJM & Elwenspoek, MC 2005, Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates. in AG Cullis & JL Hutchison (eds), Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK. Springer Proceedings in Physics, no. please ass/107, vol. 107, Springer, Berlin, Heidelberg, pp. 75-78, 14th Conference on Microscopy of Semiconducting Materials 2005, Oxford, United Kingdom, 11/04/05. https://doi.org/10.1007/3-540-31915-8_15

Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates. / Saravanan, S.; Keim, Enrico G.; Krijnen, Gijsbertus J.M. et al.
Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK. ed. / A.G. Cullis; J.L. Hutchison. Berlin, Heidelberg: Springer, 2005. p. 75-78 (Springer Proceedings in Physics; Vol. 107, No. please ass/107).

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

TY - CHAP

T1 - Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates

AU - Saravanan, S.

AU - Keim, Enrico G.

AU - Krijnen, Gijsbertus J.M.

AU - Elwenspoek, Michael Curt

N1 - Conference code: 14

PY - 2005/7

Y1 - 2005/7

N2 - This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the preferred orientation for piezoelectric applications. TEM shows the presence of a 4 nm thick semi-crystalline interface between silicon and the AlN layer. A basic growth mechanism is proposed from microstructural observations.

AB - This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the preferred orientation for piezoelectric applications. TEM shows the presence of a 4 nm thick semi-crystalline interface between silicon and the AlN layer. A basic growth mechanism is proposed from microstructural observations.

KW - AlN

KW - RF-sputtering

KW - Piezoelectric

KW - Thin film

U2 - 10.1007/3-540-31915-8_15

DO - 10.1007/3-540-31915-8_15

M3 - Chapter

SN - 978-3-540-31914-6

T3 - Springer Proceedings in Physics

SP - 75

EP - 78

BT - Microscopy of Semiconducting Materials

A2 - Cullis, A.G.

A2 - Hutchison, J.L.

PB - Springer

CY - Berlin, Heidelberg

T2 - 14th Conference on Microscopy of Semiconducting Materials 2005

Y2 - 11 April 2005 through 14 April 2005

ER -

Saravanan S, Keim EG, Krijnen GJM, Elwenspoek MC. Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates. In Cullis AG, Hutchison JL, editors, Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK. Berlin, Heidelberg: Springer. 2005. p. 75-78. (Springer Proceedings in Physics; please ass/107). doi: 10.1007/3-540-31915-8_15

Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates

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