Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates

S. Saravanan, S. Saravanan, Enrico G. Keim, Gijsbertus J.M. Krijnen, Michael Curt Elwenspoek

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    Abstract

    This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the preferred orientation for piezoelectric applications. TEM shows the presence of a 4 nm thick semi-crystalline interface between silicon and the AlN layer. A basic growth mechanism is proposed from microstructural observations.
    Original languageUndefined
    Title of host publicationMicroscopy of Semiconducting Materials
    EditorsA.G. Cullis, J.L. Hutchison
    PublisherSpringer
    Pages75-78
    Number of pages4
    ISBN (Print)978-3-540-31914-6
    DOIs
    Publication statusPublished - Jul 2005

    Publication series

    NameSpringer Proceedings in Physics
    PublisherSpringer
    Numberplease ass/107
    Volume107
    ISSN (Print)0930-8989

    Keywords

    • IR-64274
    • AlN
    • RF-sputtering
    • METIS-248155
    • piezoelectric
    • EWI-10849
    • Thin film

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