Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates

S. Saravanan, Enrico G. Keim, Gijsbertus J.M. Krijnen, Michael Curt Elwenspoek

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    Abstract

    This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the preferred orientation for piezoelectric applications. TEM shows the presence of a 4 nm thick semi-crystalline interface between silicon and the AlN layer. A basic growth mechanism is proposed from microstructural observations.
    Original languageEnglish
    Title of host publicationMicroscopy of Semiconducting Materials
    Subtitle of host publicationProceedings of the 14th Conference, April 11–14, 2005, Oxford, UK
    EditorsA.G. Cullis, J.L. Hutchison
    Place of PublicationBerlin, Heidelberg
    PublisherSpringer
    Pages75-78
    Number of pages4
    ISBN (Electronic)978-3-540-31915-3
    ISBN (Print)978-3-540-31914-6
    DOIs
    Publication statusPublished - Jul 2005
    Event14th Conference on Microscopy of Semiconducting Materials 2005 - Oxford, United Kingdom
    Duration: 11 Apr 200514 Apr 2005
    Conference number: 14

    Publication series

    NameSpringer Proceedings in Physics
    PublisherSpringer
    Numberplease ass/107
    Volume107
    ISSN (Print)0930-8989

    Conference

    Conference14th Conference on Microscopy of Semiconducting Materials 2005
    Country/TerritoryUnited Kingdom
    CityOxford
    Period11/04/0514/04/05

    Keywords

    • AlN
    • RF-sputtering
    • Piezoelectric
    • Thin film

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