Growth Anisotropy and Pattern Formation in Metal Epitaxy

L.C. Jorritsma, Louis C. Jorritsma, Matthieu Bijnagte, G. Rosenfeld, Bene Poelsema

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Abstract

Evidence for the formation of growth induced, ordered checkerboardlike arrangements of mesas has been obtained. These patterns develop on a metal substrate with square symmetry after deposition of tens of monolayers. Its origin is traced back to laterally anisotropic advance rates of island edges in combination with slope selection. The foundation for the mesa arrangement is already laid just after coalescence of the adatom islands in the first monolayer. The results are exemplified in a high resolution surface diffraction study for the growth of Cu on Cu(001).
Original languageUndefined
Pages (from-to)911-911
Number of pages1
JournalPhysical review letters
Volume1997
Issue number78
DOIs
Publication statusPublished - 1997

Keywords

  • IR-61215
  • METIS-128654

Cite this

Jorritsma, L. C., Jorritsma, L. C., Bijnagte, M., Rosenfeld, G., & Poelsema, B. (1997). Growth Anisotropy and Pattern Formation in Metal Epitaxy. Physical review letters, 1997(78), 911-911. https://doi.org/10.1103/PhysRevLett.78.911