Thin ruthenium films are used in several applications such as catalysis, electronics and optical coatings. Due to its low-oxidation properties, Ru films are suitable as bottom electrodes in capacitors or as capping layer for extreme ultraviolet lithography optics. For both applications, it is important that the Ru layer is fully closed in order to prevent oxidation of the underlying material, which can cause a performance failure. We monitored magnetron sputter deposition of Ru on Si, SiNx and SiO2 thin films by in vacuo Low Energy Ion Scattering. On top of Si 4.4 nm of Ru is needed to close the layer, which is mainly attributed to interdiffusion. By passivating the Si with nitrogen or oxygen, the Ru thickness for closing the layer can be reduced to 3 nm or even 1.7 nm on SiNx or SiO2, respectively. The diffusion kinetics and in-depth diffusion profiles of Ru deposited on Si, SiNx and SiO2 have been derived.
|Publication status||Published - 19 Jan 2016|
|Event||Physics@FOM Veldhoven 2016 - NH Koningshof Veldhoven, Veldhoven, The Netherlands, Netherlands|
Duration: 20 Jan 2016 → 20 Jan 2016
|Conference||Physics@FOM Veldhoven 2016|
|City||Veldhoven, The Netherlands|
|Period||20/01/16 → 20/01/16|
Coloma Ribera, R., van de Kruijs, R. W. E., Sturm, J. M., Yakshin, A., & Bijkerk, F. (2016). Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS). -. Poster session presented at Physics@FOM Veldhoven 2016, Veldhoven, The Netherlands, Netherlands.