Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)

R. Coloma Ribera; Robbert Wilhelmus Elisabeth van de Kruijs; Jacobus Marinus Sturm; Andrey Yakshin; Frederik Bijkerk

Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)

R. Coloma Ribera, Robbert Wilhelmus Elisabeth van de Kruijs, Jacobus Marinus Sturm, Andrey Yakshin, Frederik Bijkerk

XUV Optics

Research output: Contribution to conference › Poster › Other research output

Abstract

Thin ruthenium films are used in several applications such as catalysis, electronics and optical coatings. Due to its low-oxidation properties, Ru films are suitable as bottom electrodes in capacitors or as capping layer for extreme ultraviolet lithography optics. For both applications, it is important that the Ru layer is fully closed in order to prevent oxidation of the underlying material, which can cause a performance failure. We monitored magnetron sputter deposition of Ru on Si, SiNx and SiO2 thin films by in vacuo Low Energy Ion Scattering. On top of Si 4.4 nm of Ru is needed to close the layer, which is mainly attributed to interdiffusion. By passivating the Si with nitrogen or oxygen, the Ru thickness for closing the layer can be reduced to 3 nm or even 1.7 nm on SiNx or SiO2, respectively. The diffusion kinetics and in-depth diffusion profiles of Ru deposited on Si, SiNx and SiO2 have been derived.

Original language	English
Pages	-
Publication status	Published - 19 Jan 2016
Event	Physics@FOM Veldhoven 2016 - NH Koningshof Veldhoven, Veldhoven, The Netherlands, Netherlands Duration: 20 Jan 2016 → 20 Jan 2016

Conference

Conference	Physics@FOM Veldhoven 2016
Abbreviated title	FOM
Country/Territory	Netherlands
City	Veldhoven, The Netherlands
Period	20/01/16 → 20/01/16

Keywords

METIS-314618

Cite this

@conference{ea6bc459eb6a4ca1abdec6271ecbc454,

title = "Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)",

abstract = "Thin ruthenium films are used in several applications such as catalysis, electronics and optical coatings. Due to its low-oxidation properties, Ru films are suitable as bottom electrodes in capacitors or as capping layer for extreme ultraviolet lithography optics. For both applications, it is important that the Ru layer is fully closed in order to prevent oxidation of the underlying material, which can cause a performance failure. We monitored magnetron sputter deposition of Ru on Si, SiNx and SiO2 thin films by in vacuo Low Energy Ion Scattering. On top of Si 4.4 nm of Ru is needed to close the layer, which is mainly attributed to interdiffusion. By passivating the Si with nitrogen or oxygen, the Ru thickness for closing the layer can be reduced to 3 nm or even 1.7 nm on SiNx or SiO2, respectively. The diffusion kinetics and in-depth diffusion profiles of Ru deposited on Si, SiNx and SiO2 have been derived.",

keywords = "METIS-314618",

author = "{Coloma Ribera}, R. and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and Sturm, {Jacobus Marinus} and Andrey Yakshin and Frederik Bijkerk",

year = "2016",

month = jan,

day = "19",

language = "English",

pages = "--",

note = "Physics@FOM Veldhoven 2016, FOM ; Conference date: 20-01-2016 Through 20-01-2016",

}

Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS). / Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth ; Sturm, Jacobus Marinus et al.

2016. - Poster session presented at Physics@FOM Veldhoven 2016, Veldhoven, The Netherlands, Netherlands.

Research output: Contribution to conference › Poster › Other research output

TY - CONF

T1 - Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)

AU - Coloma Ribera, R.

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Sturm, Jacobus Marinus

AU - Yakshin, Andrey

AU - Bijkerk, Frederik

PY - 2016/1/19

Y1 - 2016/1/19

N2 - Thin ruthenium films are used in several applications such as catalysis, electronics and optical coatings. Due to its low-oxidation properties, Ru films are suitable as bottom electrodes in capacitors or as capping layer for extreme ultraviolet lithography optics. For both applications, it is important that the Ru layer is fully closed in order to prevent oxidation of the underlying material, which can cause a performance failure. We monitored magnetron sputter deposition of Ru on Si, SiNx and SiO2 thin films by in vacuo Low Energy Ion Scattering. On top of Si 4.4 nm of Ru is needed to close the layer, which is mainly attributed to interdiffusion. By passivating the Si with nitrogen or oxygen, the Ru thickness for closing the layer can be reduced to 3 nm or even 1.7 nm on SiNx or SiO2, respectively. The diffusion kinetics and in-depth diffusion profiles of Ru deposited on Si, SiNx and SiO2 have been derived.

AB - Thin ruthenium films are used in several applications such as catalysis, electronics and optical coatings. Due to its low-oxidation properties, Ru films are suitable as bottom electrodes in capacitors or as capping layer for extreme ultraviolet lithography optics. For both applications, it is important that the Ru layer is fully closed in order to prevent oxidation of the underlying material, which can cause a performance failure. We monitored magnetron sputter deposition of Ru on Si, SiNx and SiO2 thin films by in vacuo Low Energy Ion Scattering. On top of Si 4.4 nm of Ru is needed to close the layer, which is mainly attributed to interdiffusion. By passivating the Si with nitrogen or oxygen, the Ru thickness for closing the layer can be reduced to 3 nm or even 1.7 nm on SiNx or SiO2, respectively. The diffusion kinetics and in-depth diffusion profiles of Ru deposited on Si, SiNx and SiO2 have been derived.

KW - METIS-314618

M3 - Poster

SP - -

T2 - Physics@FOM Veldhoven 2016

Y2 - 20 January 2016 through 20 January 2016

ER -

Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)

Abstract

Conference

Keywords

Fingerprint

Cite this