Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)

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Thin ruthenium films are used in several applications such as catalysis, electronics and optical coatings. Due to its low-oxidation properties, Ru films are suitable as bottom electrodes in capacitors or as capping layer for extreme ultraviolet lithography optics. For both applications, it is important that the Ru layer is fully closed in order to prevent oxidation of the underlying material, which can cause a performance failure. We monitored magnetron sputter deposition of Ru on Si, SiNx and SiO2 thin films by in vacuo Low Energy Ion Scattering. On top of Si 4.4 nm of Ru is needed to close the layer, which is mainly attributed to interdiffusion. By passivating the Si with nitrogen or oxygen, the Ru thickness for closing the layer can be reduced to 3 nm or even 1.7 nm on SiNx or SiO2, respectively. The diffusion kinetics and in-depth diffusion profiles of Ru deposited on Si, SiNx and SiO2 have been derived.
Original languageEnglish
Publication statusPublished - 19 Jan 2016
EventPhysics@FOM Veldhoven 2016 - NH Koningshof Veldhoven, Veldhoven, The Netherlands, Netherlands
Duration: 20 Jan 201620 Jan 2016


ConferencePhysics@FOM Veldhoven 2016
Abbreviated titleFOM
CityVeldhoven, The Netherlands


  • METIS-314618


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