Growth kinetics of Si on Ge(001): cause and curve

W.C.U. Wulfhekel, B.J. Hattink, Henricus J.W. Zandvliet, G. Rosenfeld, Bene Poelsema

Research output: Other contributionOther research output

Original languageUndefined
Place of PublicationVeldhoven
Publication statusPublished - 16 Dec 1997

Keywords

  • METIS-131048

Cite this

Wulfhekel, W. C. U., Hattink, B. J., Zandvliet, H. J. W., Rosenfeld, G., & Poelsema, B. (1997, Dec 16). Growth kinetics of Si on Ge(001): cause and curve. Veldhoven.
Wulfhekel, W.C.U. ; Hattink, B.J. ; Zandvliet, Henricus J.W. ; Rosenfeld, G. ; Poelsema, Bene. / Growth kinetics of Si on Ge(001): cause and curve. 1997. Veldhoven.
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title = "Growth kinetics of Si on Ge(001): cause and curve",
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author = "W.C.U. Wulfhekel and B.J. Hattink and Zandvliet, {Henricus J.W.} and G. Rosenfeld and Bene Poelsema",
year = "1997",
month = "12",
day = "16",
language = "Undefined",
type = "Other",

}

Wulfhekel, WCU, Hattink, BJ, Zandvliet, HJW, Rosenfeld, G & Poelsema, B 1997, Growth kinetics of Si on Ge(001): cause and curve. Veldhoven.

Growth kinetics of Si on Ge(001): cause and curve. / Wulfhekel, W.C.U.; Hattink, B.J.; Zandvliet, Henricus J.W.; Rosenfeld, G.; Poelsema, Bene.

Veldhoven. 1997, .

Research output: Other contributionOther research output

TY - GEN

T1 - Growth kinetics of Si on Ge(001): cause and curve

AU - Wulfhekel, W.C.U.

AU - Hattink, B.J.

AU - Zandvliet, Henricus J.W.

AU - Rosenfeld, G.

AU - Poelsema, Bene

PY - 1997/12/16

Y1 - 1997/12/16

KW - METIS-131048

M3 - Other contribution

CY - Veldhoven

ER -