Growth mode transition from layer-by-layer to step-flow during the growth of heteroepitaxial SrRu)3 on (001) SrTiO3

J. Choi; C.B. Eom; Augustinus J.H.M. Rijnders; Horst Rogalla; David H.A. Blank

doi:10.1063/1.1389837

Growth mode transition from layer-by-layer to step-flow during the growth of heteroepitaxial SrRu)3 on (001) SrTiO3

J. Choi, C.B. Eom, Augustinus J.H.M. Rijnders, Horst Rogalla, David H.A. Blank

Research output: Contribution to journal › Article › Academic › peer-review

115 Citations (Scopus)

Abstract

We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices.

Original language	Undefined
Pages (from-to)	1447-1449
Number of pages	3
Journal	Applied physics letters
Volume	79
Issue number	10
DOIs	https://doi.org/10.1063/1.1389837
Publication status	Published - 2001

Keywords

IR-36070
METIS-200540

Access to Document

10.1063/1.1389837

Cite this

Choi, J., Eom, C. B., Rijnders, A. J. H. M., Rogalla, H., & Blank, D. H. A. (2001). Growth mode transition from layer-by-layer to step-flow during the growth of heteroepitaxial SrRu)3 on (001) SrTiO3. Applied physics letters, 79(10), 1447-1449. https://doi.org/10.1063/1.1389837

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abstract = "We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices.",

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AU - Choi, J.

AU - Eom, C.B.

AU - Rijnders, Augustinus J.H.M.

AU - Rogalla, Horst

AU - Blank, David H.A.

PY - 2001

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N2 - We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices.

AB - We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices.

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