Growth mode transition from layer-by-layer to step-flow during the growth of heteroepitaxial SrRu)3 on (001) SrTiO3

J. Choi, C.B. Eom, Augustinus J.H.M. Rijnders, Horst Rogalla, David H.A. Blank

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices.
Original languageUndefined
Pages (from-to)1447-1449
Number of pages3
JournalApplied physics letters
Volume79
Issue number10
DOIs
Publication statusPublished - 2001

Keywords

  • IR-36070
  • METIS-200540

Cite this

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title = "Growth mode transition from layer-by-layer to step-flow during the growth of heteroepitaxial SrRu)3 on (001) SrTiO3",
abstract = "We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices.",
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author = "J. Choi and C.B. Eom and Rijnders, {Augustinus J.H.M.} and Horst Rogalla and Blank, {David H.A.}",
year = "2001",
doi = "10.1063/1.1389837",
language = "Undefined",
volume = "79",
pages = "1447--1449",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
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Growth mode transition from layer-by-layer to step-flow during the growth of heteroepitaxial SrRu)3 on (001) SrTiO3. / Choi, J.; Eom, C.B.; Rijnders, Augustinus J.H.M.; Rogalla, Horst; Blank, David H.A.

In: Applied physics letters, Vol. 79, No. 10, 2001, p. 1447-1449.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Growth mode transition from layer-by-layer to step-flow during the growth of heteroepitaxial SrRu)3 on (001) SrTiO3

AU - Choi, J.

AU - Eom, C.B.

AU - Rijnders, Augustinus J.H.M.

AU - Rogalla, Horst

AU - Blank, David H.A.

PY - 2001

Y1 - 2001

N2 - We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices.

AB - We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices.

KW - IR-36070

KW - METIS-200540

U2 - 10.1063/1.1389837

DO - 10.1063/1.1389837

M3 - Article

VL - 79

SP - 1447

EP - 1449

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 10

ER -