Growth of silicon nitride films by bombarding amorphous silicon with N+ ions: MD simulation

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Abstract

In this study, the molecular dynamics simulation method was employed to investigate the growth of silicon nitride films by using N+ ions, with energies of 50, 100, 150 and 200 eV, to bombard an amorphous silicon surface at 300 K. After an initial period of N+ bombardment, saturation of the number of N atoms deposited on the surface is observed, which is in agreement with experiments. During subsequent steady state deposition, a balance between uptake of N by the surface and sputtering of previously deposited N is established. The Si(Nx) (x = 1–4) and N(Siy) (y = 1–3) bond configurations in the grown films are analyzed.
Original languageEnglish
Pages (from-to)3245-3248
Number of pages4
JournalNuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms
Volume267
Issue number18
DOIs
Publication statusPublished - 2009

Keywords

  • METIS-265958
  • IR-72832

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