Growth of silicon on tungsten diselenide

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Abstract

Here, we report a scanning tunneling microscopy and spectroscopy study of the growth of silicon on a tungsten diselenide (WSe2) substrate. We have found convincing experimental evidence that silicon does not remain on the WSe2 substrate but rather intercalates between the top layers of WSe2. Upon silicon deposition, the flat WSe2 surface converts into a surface with a hill-and-valley structure. The lattice constant of the hill-and-valley structure is identical to the lattice constant of WSe2 and the transition from hills to valleys is very gradual, suggesting that the top layer is composed of pristine WSe2. In order to verify this conjecture, we have removed the height information from our scanning tunneling microscopy signal and obtained chemical contrast of the surface by recording dI/dz, rather than the conventional regulation voltage of the z-piezo. The spatially resolved dI/dz maps provide compelling evidence that the deposited silicon does indeed not reside on top of the WSe2 substrate.
Original languageEnglish
Article number243105
Pages (from-to)-
Number of pages4
JournalApplied physics letters
Volume109
Issue number24
DOIs
Publication statusPublished - 2016

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tungsten
valleys
silicon
scanning tunneling microscopy
flat surfaces
recording
electric potential
spectroscopy

Keywords

  • METIS-320124
  • IR-103854

Cite this

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title = "Growth of silicon on tungsten diselenide",
abstract = "Here, we report a scanning tunneling microscopy and spectroscopy study of the growth of silicon on a tungsten diselenide (WSe2) substrate. We have found convincing experimental evidence that silicon does not remain on the WSe2 substrate but rather intercalates between the top layers of WSe2. Upon silicon deposition, the flat WSe2 surface converts into a surface with a hill-and-valley structure. The lattice constant of the hill-and-valley structure is identical to the lattice constant of WSe2 and the transition from hills to valleys is very gradual, suggesting that the top layer is composed of pristine WSe2. In order to verify this conjecture, we have removed the height information from our scanning tunneling microscopy signal and obtained chemical contrast of the surface by recording dI/dz, rather than the conventional regulation voltage of the z-piezo. The spatially resolved dI/dz maps provide compelling evidence that the deposited silicon does indeed not reside on top of the WSe2 substrate.",
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author = "Qirong Yao and {van Bremen}, Rik and Zandvliet, {Henricus J.W.}",
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Growth of silicon on tungsten diselenide. / Yao, Qirong; van Bremen, Rik; Zandvliet, Henricus J.W.

In: Applied physics letters, Vol. 109, No. 24, 243105, 2016, p. -.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Growth of silicon on tungsten diselenide

AU - Yao, Qirong

AU - van Bremen, Rik

AU - Zandvliet, Henricus J.W.

PY - 2016

Y1 - 2016

N2 - Here, we report a scanning tunneling microscopy and spectroscopy study of the growth of silicon on a tungsten diselenide (WSe2) substrate. We have found convincing experimental evidence that silicon does not remain on the WSe2 substrate but rather intercalates between the top layers of WSe2. Upon silicon deposition, the flat WSe2 surface converts into a surface with a hill-and-valley structure. The lattice constant of the hill-and-valley structure is identical to the lattice constant of WSe2 and the transition from hills to valleys is very gradual, suggesting that the top layer is composed of pristine WSe2. In order to verify this conjecture, we have removed the height information from our scanning tunneling microscopy signal and obtained chemical contrast of the surface by recording dI/dz, rather than the conventional regulation voltage of the z-piezo. The spatially resolved dI/dz maps provide compelling evidence that the deposited silicon does indeed not reside on top of the WSe2 substrate.

AB - Here, we report a scanning tunneling microscopy and spectroscopy study of the growth of silicon on a tungsten diselenide (WSe2) substrate. We have found convincing experimental evidence that silicon does not remain on the WSe2 substrate but rather intercalates between the top layers of WSe2. Upon silicon deposition, the flat WSe2 surface converts into a surface with a hill-and-valley structure. The lattice constant of the hill-and-valley structure is identical to the lattice constant of WSe2 and the transition from hills to valleys is very gradual, suggesting that the top layer is composed of pristine WSe2. In order to verify this conjecture, we have removed the height information from our scanning tunneling microscopy signal and obtained chemical contrast of the surface by recording dI/dz, rather than the conventional regulation voltage of the z-piezo. The spatially resolved dI/dz maps provide compelling evidence that the deposited silicon does indeed not reside on top of the WSe2 substrate.

KW - METIS-320124

KW - IR-103854

U2 - 10.1063/1.4972036

DO - 10.1063/1.4972036

M3 - Article

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SP - -

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 24

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ER -