Growth of sub-nanometer thin continuous TiN films by atomic layer deposition

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    Abstract

    This work reports on the initial growth of atomic layer deposited titanium nitride thin films on SiO2 substrate at temperatures of 350–425◦C and process pressures of 2.6–3.2×10−2 mbar. We used spectroscopic ellipsometry for in situ monitoring the growth, atomic force microscopy and electrical measurements for further film characterization. We demonstrate that the growth obeys Stranski – Krastanov mode with an initial 2D growth followed by a 3D island formation. The growth of the islands eventually leads to coalescence. We found the 2D–3D transition to be independent of temperature whereas the coalescence of the 3D islands is strongly affected by temperature. The former takes place as the film thickness reaches 0.69 ± 0.1 nm, which is equivalent to 3 monolayers of TiN. The latter occurs at a thickness of 2.5 ± 0.1 nm for 350◦C and at a thickness of 3.5 ± 0.1 nm for 425◦C.
    Original languageUndefined
    Pages (from-to)285-290
    Number of pages6
    JournalECS journal of solid state science and technology
    Volume1
    Issue number6
    DOIs
    Publication statusPublished - 3 Oct 2012

    Keywords

    • EWI-22362
    • IR-82081
    • METIS-296107

    Cite this

    @article{3671d359a56548dcbd1a896dc0b57bdf,
    title = "Growth of sub-nanometer thin continuous TiN films by atomic layer deposition",
    abstract = "This work reports on the initial growth of atomic layer deposited titanium nitride thin films on SiO2 substrate at temperatures of 350–425◦C and process pressures of 2.6–3.2×10−2 mbar. We used spectroscopic ellipsometry for in situ monitoring the growth, atomic force microscopy and electrical measurements for further film characterization. We demonstrate that the growth obeys Stranski – Krastanov mode with an initial 2D growth followed by a 3D island formation. The growth of the islands eventually leads to coalescence. We found the 2D–3D transition to be independent of temperature whereas the coalescence of the 3D islands is strongly affected by temperature. The former takes place as the film thickness reaches 0.69 ± 0.1 nm, which is equivalent to 3 monolayers of TiN. The latter occurs at a thickness of 2.5 ± 0.1 nm for 350◦C and at a thickness of 3.5 ± 0.1 nm for 425◦C.",
    keywords = "EWI-22362, IR-82081, METIS-296107",
    author = "{Van Hao}, B. and Kovalgin, {Alexeij Y.} and Wolters, {Robertus A.M.}",
    note = "eemcs-eprint-22362",
    year = "2012",
    month = "10",
    day = "3",
    doi = "10.1149/2.020206jss",
    language = "Undefined",
    volume = "1",
    pages = "285--290",
    journal = "ECS journal of solid state science and technology",
    issn = "2162-8769",
    publisher = "The Electrochemical Society Inc.",
    number = "6",

    }

    Growth of sub-nanometer thin continuous TiN films by atomic layer deposition. / Van Hao, B.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    In: ECS journal of solid state science and technology, Vol. 1, No. 6, 03.10.2012, p. 285-290.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Growth of sub-nanometer thin continuous TiN films by atomic layer deposition

    AU - Van Hao, B.

    AU - Kovalgin, Alexeij Y.

    AU - Wolters, Robertus A.M.

    N1 - eemcs-eprint-22362

    PY - 2012/10/3

    Y1 - 2012/10/3

    N2 - This work reports on the initial growth of atomic layer deposited titanium nitride thin films on SiO2 substrate at temperatures of 350–425◦C and process pressures of 2.6–3.2×10−2 mbar. We used spectroscopic ellipsometry for in situ monitoring the growth, atomic force microscopy and electrical measurements for further film characterization. We demonstrate that the growth obeys Stranski – Krastanov mode with an initial 2D growth followed by a 3D island formation. The growth of the islands eventually leads to coalescence. We found the 2D–3D transition to be independent of temperature whereas the coalescence of the 3D islands is strongly affected by temperature. The former takes place as the film thickness reaches 0.69 ± 0.1 nm, which is equivalent to 3 monolayers of TiN. The latter occurs at a thickness of 2.5 ± 0.1 nm for 350◦C and at a thickness of 3.5 ± 0.1 nm for 425◦C.

    AB - This work reports on the initial growth of atomic layer deposited titanium nitride thin films on SiO2 substrate at temperatures of 350–425◦C and process pressures of 2.6–3.2×10−2 mbar. We used spectroscopic ellipsometry for in situ monitoring the growth, atomic force microscopy and electrical measurements for further film characterization. We demonstrate that the growth obeys Stranski – Krastanov mode with an initial 2D growth followed by a 3D island formation. The growth of the islands eventually leads to coalescence. We found the 2D–3D transition to be independent of temperature whereas the coalescence of the 3D islands is strongly affected by temperature. The former takes place as the film thickness reaches 0.69 ± 0.1 nm, which is equivalent to 3 monolayers of TiN. The latter occurs at a thickness of 2.5 ± 0.1 nm for 350◦C and at a thickness of 3.5 ± 0.1 nm for 425◦C.

    KW - EWI-22362

    KW - IR-82081

    KW - METIS-296107

    U2 - 10.1149/2.020206jss

    DO - 10.1149/2.020206jss

    M3 - Article

    VL - 1

    SP - 285

    EP - 290

    JO - ECS journal of solid state science and technology

    JF - ECS journal of solid state science and technology

    SN - 2162-8769

    IS - 6

    ER -