Growth of superconducting RBa2Cu3O7-delta on silicon: Choice of a buffer layer

L.L. Mechin, G.J. Gerritsma, J.C. Villegier

    Research output: Contribution to journalArticleAcademicpeer-review

    Original languageUndefined
    Pages (from-to)585-588
    Number of pages4
    JournalVide, les couches minces
    Volume53
    Issue number289
    Publication statusPublished - 1999

    Keywords

    • METIS-128837

    Cite this

    Mechin, L. L., Gerritsma, G. J., & Villegier, J. C. (1999). Growth of superconducting RBa2Cu3O7-delta on silicon: Choice of a buffer layer. Vide, les couches minces, 53(289), 585-588.
    Mechin, L.L. ; Gerritsma, G.J. ; Villegier, J.C. / Growth of superconducting RBa2Cu3O7-delta on silicon: Choice of a buffer layer. In: Vide, les couches minces. 1999 ; Vol. 53, No. 289. pp. 585-588.
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    title = "Growth of superconducting RBa2Cu3O7-delta on silicon: Choice of a buffer layer",
    keywords = "METIS-128837",
    author = "L.L. Mechin and G.J. Gerritsma and J.C. Villegier",
    year = "1999",
    language = "Undefined",
    volume = "53",
    pages = "585--588",
    journal = "Vide: Science, Technique et Applications",
    issn = "1266-0167",
    publisher = "Societe Francaise du Vide",
    number = "289",

    }

    Mechin, LL, Gerritsma, GJ & Villegier, JC 1999, 'Growth of superconducting RBa2Cu3O7-delta on silicon: Choice of a buffer layer' Vide, les couches minces, vol. 53, no. 289, pp. 585-588.

    Growth of superconducting RBa2Cu3O7-delta on silicon: Choice of a buffer layer. / Mechin, L.L.; Gerritsma, G.J.; Villegier, J.C.

    In: Vide, les couches minces, Vol. 53, No. 289, 1999, p. 585-588.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Growth of superconducting RBa2Cu3O7-delta on silicon: Choice of a buffer layer

    AU - Mechin, L.L.

    AU - Gerritsma, G.J.

    AU - Villegier, J.C.

    PY - 1999

    Y1 - 1999

    KW - METIS-128837

    M3 - Article

    VL - 53

    SP - 585

    EP - 588

    JO - Vide: Science, Technique et Applications

    JF - Vide: Science, Technique et Applications

    SN - 1266-0167

    IS - 289

    ER -