Growth of Yb3+, Lu3+, Gd3+ co-doped KY(WO4)2 thin layers

S. Aravazhi, D. Geskus, Markus Pollnau

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    Abstract

    Rare-earth-ion-doped $KY(WO_4)_2 (KYW)$ is an important candidate for solid-state lasers. Its high refractive indices of the order of 2.0 make it attractive also for applications as integrated optical devices. Liquid phase epitaxy was employed for growing mono-crystalline KYW thin films co-doped with $Yb^{3+}$, $Lu^{3+}$, and $Gd^{3+}$. Concentrations of the optically inert co-dopants $Lu^{3+}$ and $Gd^{3+}$, which decrease or increase the KYW lattice parameters, respectively, were optimized for lattice matching with the KYW substrate. $Lu^{3+}$ was partially replaced by $Yb^{3+}$ to achieve active optical doping from a few up to 20%. Optimized growth conditions provided crack-free layers.
    Original languageUndefined
    Title of host publicationProceedings of the 13th Annual Symposium of the IEEE LEOS Benelux Chapter
    EditorsKerstin Worhoff, L. Agazzi, N. Ismail, X Leijtens
    Place of PublicationEnschede, The Netherlands
    PublisherIEEE/LEOS Benelux Chapter
    Pages219-220
    Number of pages2
    ISBN (Print)978-90-365-2768-2
    Publication statusPublished - 27 Nov 2008
    Event13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008 - Enschede, Netherlands
    Duration: 27 Nov 200828 Nov 2008
    Conference number: 13

    Publication series

    Name
    PublisherIEEE LEOS Benelux Chapter
    Number2008/16200

    Conference

    Conference13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008
    CountryNetherlands
    CityEnschede
    Period27/11/0828/11/08

    Keywords

    • IOMS-APD: Active Photonic Devices
    • METIS-255105
    • IR-62684
    • EWI-14848

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