Growth of ZnO thin films on GaAs by pulsed laser deposition

V. Craciun; J. Elders; Johannes G.E. Gardeniers; J. Geretovsky; Ian W. Boyd

doi:10.1016/0040-6090(94)09479-9

Growth of ZnO thin films on GaAs by pulsed laser deposition

V. Craciun, J. Elders, Johannes G.E. Gardeniers, J. Geretovsky, Ian W. Boyd

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13° have been grown on such buffer layers at a substrate temperature of only 350°C.

Original language	Undefined
Pages (from-to)	1-4
Number of pages	4
Journal	Thin solid films
Volume	1995
Issue number	259
DOIs	https://doi.org/10.1016/0040-6090(94)09479-9
Publication status	Published - 1 Apr 1995

Keywords

METIS-111577
IR-14382
EWI-14047

Access to Document

10.1016/0040-6090(94)09479-9

Cite this

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abstract = "ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13° have been grown on such buffer layers at a substrate temperature of only 350°C.",

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author = "V. Craciun and J. Elders and Gardeniers, {Johannes G.E.} and J. Geretovsky and Boyd, {Ian W.}",

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T1 - Growth of ZnO thin films on GaAs by pulsed laser deposition

AU - Craciun, V.

AU - Elders, J.

AU - Gardeniers, Johannes G.E.

AU - Geretovsky, J.

AU - Boyd, Ian W.

PY - 1995/4/1

Y1 - 1995/4/1

N2 - ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13° have been grown on such buffer layers at a substrate temperature of only 350°C.

AB - ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13° have been grown on such buffer layers at a substrate temperature of only 350°C.

KW - METIS-111577

KW - IR-14382

KW - EWI-14047

U2 - 10.1016/0040-6090(94)09479-9

DO - 10.1016/0040-6090(94)09479-9

M3 - Article

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VL - 1995

SP - 1

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JO - Thin solid films

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IS - 259

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