Growth of ZnO thin films on GaAs by pulsed laser deposition

V. Craciun, J. Elders, Johannes G.E. Gardeniers, J. Geretovsky, Ian W. Boyd

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Abstract

ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13° have been grown on such buffer layers at a substrate temperature of only 350°C.
Original languageUndefined
Pages (from-to)1-4
Number of pages4
JournalThin solid films
Volume1995
Issue number259
DOIs
Publication statusPublished - 1 Apr 1995

Keywords

  • METIS-111577
  • IR-14382
  • EWI-14047

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