ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13° have been grown on such buffer layers at a substrate temperature of only 350°C.
Craciun, V., Elders, J., Gardeniers, J. G. E., Geretovsky, J., & Boyd, I. W. (1995). Growth of ZnO thin films on GaAs by pulsed laser deposition. Thin solid films, 1995(259), 1-4. https://doi.org/10.1016/0040-6090(94)09479-9