Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction (RHEED)

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1 Citation (Scopus)

Abstract

In this chapter, reflection high-energy electron diffraction (RHEED) in combination with pulsed laser deposition (PLD) is described. Both the use of RHEED as a real-time rate-monitoring technique and methods to study nucleation and growth during PLD are discussed. After a brief introduction of RHEED, a case is made for the step density model to describe the intensity variations encountered during deposition. An overview of these intensity variations, the intensity response during an RHEED experiment as a result of various kinetic growth modes, is given
Original languageUndefined
Title of host publicationEpitaxial Growth of Complex Metal Oxides
EditorsG. Koster, M. Huijben, A.J.H.M. Rijnders
Place of PublicationCambridge, UK
PublisherWoodhead Publishing
Pages3-29
Number of pages486
ISBN (Print)978-1-78242-245-7
DOIs
Publication statusPublished - 2015

Publication series

NameWoodhead Publishing Series in Electronic and Optical Materials
PublisherWoodhead Publishing

Keywords

  • METIS-310904
  • IR-96692

Cite this

Koster, G., Huijben, M., Janssen, A., & Rijnders, A. J. H. M. (2015). Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction (RHEED). In G. Koster, M. Huijben, & A. J. H. M. Rijnders (Eds.), Epitaxial Growth of Complex Metal Oxides (pp. 3-29). (Woodhead Publishing Series in Electronic and Optical Materials). Cambridge, UK: Woodhead Publishing. https://doi.org/10.1016/B978-1-78242-245-7.00001-4