Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction

Gertjan Koster; Yorick Birkhölzer; Mark Huijben; Guus Rijnders; Matjaž Spreitzer; Lior Kornblum; Sander Smink

doi:10.1016/B978-0-08-102945-9.00003-4

Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction

Gertjan Koster, Yorick Birkhölzer, Mark Huijben, Guus Rijnders, Matjaž Spreitzer, Lior Kornblum, Sander Smink

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

3 Citations (Scopus)

89 Downloads (Pure)

Abstract

In this chapter, examples of the use of reflection high-energy electron diffraction (RHEED) in combination with pulsed laser deposition (PLD) are described. Both the use of RHEED as a real-time rate-monitoring technique as well as methods to study the nucleation and growth during PLD are briefly discussed. After a brief introduction of RHEED, a case will be made for the step-density model to describe the intensity variations encountered during deposition. An overview of the intensity variations, the intensity response during a RHEED experiment because of various initial growth modes, of the LaAlO3/SrTiO3, SrRuO3/SrTiO3, and YBa2Cu3O7/SrTiO3 systems will be given, focusing on the role of the chemical terminations of the starting growth surface. In addition to the growth on oxide single crystal, RHEED was used extensively to study the growth of oxide (buffer) layers on Si and other semiconductors. Finally, RHEED can be used postdeposition to reveal various properties of the as-deposited thin film.

Original language	English
Title of host publication	Epitaxial Growth of Complex Metal Oxides
Publisher	Elsevier
Chapter	1
Pages	3-36
Number of pages	34
Edition	2nd
ISBN (Electronic)	9780081029459
ISBN (Print)	9780081029466
DOIs	https://doi.org/10.1016/B978-0-08-102945-9.00003-4
Publication status	Published - 1 Jan 2022

Publication series

Name	Woodhead Publishing Series in Electronic and Optical Materials

Keywords

2024 OA procedure
Step density model
Thin film growth modes
Electron diffraction

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10.1016/B978-0-08-102945-9.00003-4

3-s2.0-B9780081029459000034-mainFinal published version, 4.2 MBLicence: Taverne

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Koster, G., Birkhölzer, Y., Huijben, M., Rijnders, G., Spreitzer, M., Kornblum, L., & Smink, S. (2022). Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction. In Epitaxial Growth of Complex Metal Oxides (2nd ed., pp. 3-36). (Woodhead Publishing Series in Electronic and Optical Materials). Elsevier. https://doi.org/10.1016/B978-0-08-102945-9.00003-4

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abstract = "In this chapter, examples of the use of reflection high-energy electron diffraction (RHEED) in combination with pulsed laser deposition (PLD) are described. Both the use of RHEED as a real-time rate-monitoring technique as well as methods to study the nucleation and growth during PLD are briefly discussed. After a brief introduction of RHEED, a case will be made for the step-density model to describe the intensity variations encountered during deposition. An overview of the intensity variations, the intensity response during a RHEED experiment because of various initial growth modes, of the LaAlO3/SrTiO3, SrRuO3/SrTiO3, and YBa2Cu3O7/SrTiO3 systems will be given, focusing on the role of the chemical terminations of the starting growth surface. In addition to the growth on oxide single crystal, RHEED was used extensively to study the growth of oxide (buffer) layers on Si and other semiconductors. Finally, RHEED can be used postdeposition to reveal various properties of the as-deposited thin film.",

keywords = "2024 OA procedure, Step density model, Thin film growth modes, Electron diffraction",

author = "Gertjan Koster and Yorick Birkh{\"o}lzer and Mark Huijben and Guus Rijnders and Matja{\v z} Spreitzer and Lior Kornblum and Sander Smink",

year = "2022",

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language = "English",

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Koster, G, Birkhölzer, Y, Huijben, M , Rijnders, G, Spreitzer, M, Kornblum, L & Smink, S 2022, Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction. in Epitaxial Growth of Complex Metal Oxides. 2nd edn, Woodhead Publishing Series in Electronic and Optical Materials, Elsevier, pp. 3-36. https://doi.org/10.1016/B978-0-08-102945-9.00003-4

Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction. / Koster, Gertjan; Birkhölzer, Yorick; Huijben, Mark et al.
Epitaxial Growth of Complex Metal Oxides. 2nd. ed. Elsevier, 2022. p. 3-36 (Woodhead Publishing Series in Electronic and Optical Materials).

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

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T1 - Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction

AU - Koster, Gertjan

AU - Birkhölzer, Yorick

AU - Huijben, Mark

AU - Rijnders, Guus

AU - Spreitzer, Matjaž

AU - Kornblum, Lior

AU - Smink, Sander

PY - 2022/1/1

Y1 - 2022/1/1

N2 - In this chapter, examples of the use of reflection high-energy electron diffraction (RHEED) in combination with pulsed laser deposition (PLD) are described. Both the use of RHEED as a real-time rate-monitoring technique as well as methods to study the nucleation and growth during PLD are briefly discussed. After a brief introduction of RHEED, a case will be made for the step-density model to describe the intensity variations encountered during deposition. An overview of the intensity variations, the intensity response during a RHEED experiment because of various initial growth modes, of the LaAlO3/SrTiO3, SrRuO3/SrTiO3, and YBa2Cu3O7/SrTiO3 systems will be given, focusing on the role of the chemical terminations of the starting growth surface. In addition to the growth on oxide single crystal, RHEED was used extensively to study the growth of oxide (buffer) layers on Si and other semiconductors. Finally, RHEED can be used postdeposition to reveal various properties of the as-deposited thin film.

AB - In this chapter, examples of the use of reflection high-energy electron diffraction (RHEED) in combination with pulsed laser deposition (PLD) are described. Both the use of RHEED as a real-time rate-monitoring technique as well as methods to study the nucleation and growth during PLD are briefly discussed. After a brief introduction of RHEED, a case will be made for the step-density model to describe the intensity variations encountered during deposition. An overview of the intensity variations, the intensity response during a RHEED experiment because of various initial growth modes, of the LaAlO3/SrTiO3, SrRuO3/SrTiO3, and YBa2Cu3O7/SrTiO3 systems will be given, focusing on the role of the chemical terminations of the starting growth surface. In addition to the growth on oxide single crystal, RHEED was used extensively to study the growth of oxide (buffer) layers on Si and other semiconductors. Finally, RHEED can be used postdeposition to reveal various properties of the as-deposited thin film.

KW - 2024 OA procedure

KW - Step density model

KW - Thin film growth modes

KW - Electron diffraction

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SN - 9780081029466

T3 - Woodhead Publishing Series in Electronic and Optical Materials

SP - 3

EP - 36

BT - Epitaxial Growth of Complex Metal Oxides

PB - Elsevier

ER -

Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction

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