Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides

U. Celano; Y. Lee; J. Serron; C. Smith; J. Franco; K. Ryu; M. Kim; S. Park; J. Lee; J. Kim; P. van der Heide

doi:10.1016/j.sse.2021.108136

Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides

U. Celano^*, Y. Lee, J. Serron, C. Smith, J. Franco, K. Ryu, M. Kim, S. Park, J. Lee, J. Kim, P. van der Heide

^*Corresponding author for this work

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Abstract

We report on a quantitative use of Kelvin probe force microscopy (KPFM) for the analysis of charge injection in thin oxides. Here, thin dielectrics are investigated through an atomic force microscopy tip that is used as a movable (virtual) top-electrode. The charge is injected and read-out respectively by alternating the direct contact of the probe with the oxide, and with non-contact surface potential imaging. The contact potential difference (CPD) between the atomic force microscope tip and the oxide surface is used to measure the charge distribution under multiple electrical stress conditions, thus correlating locally trapped charge with dielectric properties.

Original language	English
Article number	108136
Journal	Solid-state electronics
Volume	185
Early online date	17 Jun 2021
DOIs	https://doi.org/10.1016/j.sse.2021.108136
Publication status	Published - Nov 2021

Keywords

2022 OA procedure
Characterization techniques for dielectrics and interfaces
Charge injection
Dielectrics characterization
KPFM
C-AFM

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10.1016/j.sse.2021.108136

Celano-2021-Harnessing-charge-injection-in-kelvFinal published version, 3.45 MBLicence: Taverne

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title = "Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides",

abstract = "We report on a quantitative use of Kelvin probe force microscopy (KPFM) for the analysis of charge injection in thin oxides. Here, thin dielectrics are investigated through an atomic force microscopy tip that is used as a movable (virtual) top-electrode. The charge is injected and read-out respectively by alternating the direct contact of the probe with the oxide, and with non-contact surface potential imaging. The contact potential difference (CPD) between the atomic force microscope tip and the oxide surface is used to measure the charge distribution under multiple electrical stress conditions, thus correlating locally trapped charge with dielectric properties.",

keywords = "2022 OA procedure, Characterization techniques for dielectrics and interfaces, Charge injection, Dielectrics characterization, KPFM, C-AFM",

author = "U. Celano and Y. Lee and J. Serron and C. Smith and J. Franco and K. Ryu and M. Kim and S. Park and J. Lee and J. Kim and {van der Heide}, P.",

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doi = "10.1016/j.sse.2021.108136",

language = "English",

volume = "185",

journal = "Solid-state electronics",

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T1 - Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides

AU - Celano, U.

AU - Lee, Y.

AU - Serron, J.

AU - Smith, C.

AU - Franco, J.

AU - Ryu, K.

AU - Kim, M.

AU - Park, S.

AU - Lee, J.

AU - Kim, J.

AU - van der Heide, P.

PY - 2021/11

Y1 - 2021/11

N2 - We report on a quantitative use of Kelvin probe force microscopy (KPFM) for the analysis of charge injection in thin oxides. Here, thin dielectrics are investigated through an atomic force microscopy tip that is used as a movable (virtual) top-electrode. The charge is injected and read-out respectively by alternating the direct contact of the probe with the oxide, and with non-contact surface potential imaging. The contact potential difference (CPD) between the atomic force microscope tip and the oxide surface is used to measure the charge distribution under multiple electrical stress conditions, thus correlating locally trapped charge with dielectric properties.

AB - We report on a quantitative use of Kelvin probe force microscopy (KPFM) for the analysis of charge injection in thin oxides. Here, thin dielectrics are investigated through an atomic force microscopy tip that is used as a movable (virtual) top-electrode. The charge is injected and read-out respectively by alternating the direct contact of the probe with the oxide, and with non-contact surface potential imaging. The contact potential difference (CPD) between the atomic force microscope tip and the oxide surface is used to measure the charge distribution under multiple electrical stress conditions, thus correlating locally trapped charge with dielectric properties.

KW - 2022 OA procedure

KW - Characterization techniques for dielectrics and interfaces

KW - Charge injection

KW - Dielectrics characterization

KW - KPFM

KW - C-AFM

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DO - 10.1016/j.sse.2021.108136

M3 - Article

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SN - 0038-1101

VL - 185

JO - Solid-state electronics

JF - Solid-state electronics

M1 - 108136

ER -

Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides

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Keywords

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