Heat transport in cold-wall single-wafer low pressure chemical-vapor-deposition reactors

A. Hasper; J.E.J. Schmitz; J. Holleman; J.F. Verweij

doi:10.1116/1.577842

Heat transport in cold-wall single-wafer low pressure chemical-vapor-deposition reactors

A. Hasper, J.E.J. Schmitz, J. Holleman, J.F. Verweij

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Abstract

A model is formulated to understand and predict wafer temperatures in a tungsten low pressure chemical‐vapor‐deposition (LPCVD) single‐wafer cold‐wall reactor equipped with hot plate heating. The temperature control is usually carried out on the hot plate temperature. Large differences can occur between the susceptor and the wafer temperature, especially at the typically low pressures for LPCVD systems. Verification of the model was done by measurements of the true wafer temperatures as a function of total pressure, gas composition, gas flow, and coatings of wafer and susceptor. A good agreement between model and measurements was found by considering the heat transport by radiation and gas conduction

Original language	English
Pages (from-to)	3193-3202
Number of pages	0
Journal	Journal of vacuum science & technology A: vacuum, surfaces, and films
Volume	10
Issue number	5
DOIs	https://doi.org/10.1116/1.577842
Publication status	Published - 1992

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title = "Heat transport in cold-wall single-wafer low pressure chemical-vapor-deposition reactors",

abstract = "A model is formulated to understand and predict wafer temperatures in a tungsten low pressure chemical‐vapor‐deposition (LPCVD) single‐wafer cold‐wall reactor equipped with hot plate heating. The temperature control is usually carried out on the hot plate temperature. Large differences can occur between the susceptor and the wafer temperature, especially at the typically low pressures for LPCVD systems. Verification of the model was done by measurements of the true wafer temperatures as a function of total pressure, gas composition, gas flow, and coatings of wafer and susceptor. A good agreement between model and measurements was found by considering the heat transport by radiation and gas conduction",

author = "A. Hasper and J.E.J. Schmitz and J. Holleman and J.F. Verweij",

year = "1992",

doi = "10.1116/1.577842",

language = "English",

volume = "10",

pages = "3193--3202",

journal = "Journal of vacuum science & technology A: vacuum, surfaces, and films",

issn = "0734-2101",

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T1 - Heat transport in cold-wall single-wafer low pressure chemical-vapor-deposition reactors

AU - Hasper, A.

AU - Schmitz, J.E.J.

AU - Holleman, J.

AU - Verweij, J.F.

PY - 1992

Y1 - 1992

N2 - A model is formulated to understand and predict wafer temperatures in a tungsten low pressure chemical‐vapor‐deposition (LPCVD) single‐wafer cold‐wall reactor equipped with hot plate heating. The temperature control is usually carried out on the hot plate temperature. Large differences can occur between the susceptor and the wafer temperature, especially at the typically low pressures for LPCVD systems. Verification of the model was done by measurements of the true wafer temperatures as a function of total pressure, gas composition, gas flow, and coatings of wafer and susceptor. A good agreement between model and measurements was found by considering the heat transport by radiation and gas conduction

AB - A model is formulated to understand and predict wafer temperatures in a tungsten low pressure chemical‐vapor‐deposition (LPCVD) single‐wafer cold‐wall reactor equipped with hot plate heating. The temperature control is usually carried out on the hot plate temperature. Large differences can occur between the susceptor and the wafer temperature, especially at the typically low pressures for LPCVD systems. Verification of the model was done by measurements of the true wafer temperatures as a function of total pressure, gas composition, gas flow, and coatings of wafer and susceptor. A good agreement between model and measurements was found by considering the heat transport by radiation and gas conduction

U2 - 10.1116/1.577842

DO - 10.1116/1.577842

M3 - Article

SN - 0734-2101

VL - 10

SP - 3193

EP - 3202

JO - Journal of vacuum science & technology A: vacuum, surfaces, and films

JF - Journal of vacuum science & technology A: vacuum, surfaces, and films

IS - 5

ER -

Heat transport in cold-wall single-wafer low pressure chemical-vapor-deposition reactors

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