Heatsink-less Quasi 3-level flying capacitor inverter based on low voltage SMD MOSFETs

Mario Schweizer, Thiago B. Soeiro

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

45 Citations (Scopus)

Abstract

Outstanding efficiencies can be achieved by the utilization of the latest technology of low voltage, SMD-packaged Si-or GaN-based semiconductors. These devices allow a heatsink- and fan-less converter design, thus lightweight and high power density converters are typically derived. This paper investigates the advantages of using these relatively low cost SMD-packaged devices in medium power industrial applications. A Quasi 3-level Flying-Capacitor topology is proposed. A cost-performing map is presented in order to verify the benefits of designing this system with low voltage Si-or GaN-based MOSFETs against the latest 650 V IGBTs and 900 V SiC MOSFETs. Finally, a heatsink-less 3.3 kW single-phase inverter prototype implementing 150 V SMD-packaged Si MOSFETs was designed and successfully tested.

Original languageEnglish
Title of host publication2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
PublisherIEEE
ISBN (Electronic)978-90-75815-27-6
ISBN (Print)978-1-5386-0530-1, 978-90-75815-26-9 (USB)
DOIs
Publication statusPublished - 6 Nov 2017
Externally publishedYes
Event19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe - Warsaw, Poland
Duration: 11 Sept 201714 Sept 2017
Conference number: 19

Conference

Conference19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
Abbreviated titleEPE 2017 ECCE Europe
Country/TerritoryPoland
CityWarsaw
Period11/09/1714/09/17

Keywords

  • High power density systems
  • MOSFET
  • Photovoltaic
  • Thermal design
  • Voltage source inverters (VSI)
  • n/a OA procedure

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