Abstract
Outstanding efficiencies can be achieved by the utilization of the latest technology of low voltage, SMD-packaged Si-or GaN-based semiconductors. These devices allow a heatsink- and fan-less converter design, thus lightweight and high power density converters are typically derived. This paper investigates the advantages of using these relatively low cost SMD-packaged devices in medium power industrial applications. A Quasi 3-level Flying-Capacitor topology is proposed. A cost-performing map is presented in order to verify the benefits of designing this system with low voltage Si-or GaN-based MOSFETs against the latest 650 V IGBTs and 900 V SiC MOSFETs. Finally, a heatsink-less 3.3 kW single-phase inverter prototype implementing 150 V SMD-packaged Si MOSFETs was designed and successfully tested.
Original language | English |
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Title of host publication | 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) |
Publisher | IEEE |
ISBN (Electronic) | 978-90-75815-27-6 |
ISBN (Print) | 978-1-5386-0530-1, 978-90-75815-26-9 (USB) |
DOIs | |
Publication status | Published - 6 Nov 2017 |
Externally published | Yes |
Event | 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe - Warsaw, Poland Duration: 11 Sept 2017 → 14 Sept 2017 Conference number: 19 |
Conference
Conference | 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe |
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Abbreviated title | EPE 2017 ECCE Europe |
Country/Territory | Poland |
City | Warsaw |
Period | 11/09/17 → 14/09/17 |
Keywords
- High power density systems
- MOSFET
- Photovoltaic
- Thermal design
- Voltage source inverters (VSI)
- n/a OA procedure