Heatsink-less Quasi 3-level flying capacitor inverter based on low voltage SMD MOSFETs

Mario Schweizer; Thiago B. Soeiro

doi:10.23919/EPE17ECCEEurope.2017.8098916

Heatsink-less Quasi 3-level flying capacitor inverter based on low voltage SMD MOSFETs

Mario Schweizer
, Thiago B. Soeiro

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

52 Citations (Scopus)

Abstract

Outstanding efficiencies can be achieved by the utilization of the latest technology of low voltage, SMD-packaged Si-or GaN-based semiconductors. These devices allow a heatsink- and fan-less converter design, thus lightweight and high power density converters are typically derived. This paper investigates the advantages of using these relatively low cost SMD-packaged devices in medium power industrial applications. A Quasi 3-level Flying-Capacitor topology is proposed. A cost-performing map is presented in order to verify the benefits of designing this system with low voltage Si-or GaN-based MOSFETs against the latest 650 V IGBTs and 900 V SiC MOSFETs. Finally, a heatsink-less 3.3 kW single-phase inverter prototype implementing 150 V SMD-packaged Si MOSFETs was designed and successfully tested.

Original language	English
Title of host publication	2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
Publisher	IEEE
ISBN (Electronic)	978-90-75815-27-6
ISBN (Print)	978-1-5386-0530-1, 978-90-75815-26-9 (USB)
DOIs	https://doi.org/10.23919/EPE17ECCEEurope.2017.8098916
Publication status	Published - 6 Nov 2017
Externally published	Yes
Event	19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe - Warsaw, Poland Duration: 11 Sept 2017 → 14 Sept 2017 Conference number: 19

Conference

Conference	19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
Abbreviated title	EPE 2017 ECCE Europe
Country/Territory	Poland
City	Warsaw
Period	11/09/17 → 14/09/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

High power density systems
MOSFET
Photovoltaic
Thermal design
Voltage source inverters (VSI)
n/a OA procedure

Access to Document

10.23919/EPE17ECCEEurope.2017.8098916

Cite this

@inproceedings{173c905ad137463d8bb192081dbda9a5,

title = "Heatsink-less Quasi 3-level flying capacitor inverter based on low voltage SMD MOSFETs",

abstract = "Outstanding efficiencies can be achieved by the utilization of the latest technology of low voltage, SMD-packaged Si-or GaN-based semiconductors. These devices allow a heatsink- and fan-less converter design, thus lightweight and high power density converters are typically derived. This paper investigates the advantages of using these relatively low cost SMD-packaged devices in medium power industrial applications. A Quasi 3-level Flying-Capacitor topology is proposed. A cost-performing map is presented in order to verify the benefits of designing this system with low voltage Si-or GaN-based MOSFETs against the latest 650 V IGBTs and 900 V SiC MOSFETs. Finally, a heatsink-less 3.3 kW single-phase inverter prototype implementing 150 V SMD-packaged Si MOSFETs was designed and successfully tested.",

keywords = "High power density systems, MOSFET, Photovoltaic, Thermal design, Voltage source inverters (VSI), n/a OA procedure",

author = "Mario Schweizer and Soeiro, \{Thiago B.\}",

note = "Publisher Copyright: {\textcopyright} assigned jointly to the European Power Electronics and Drives Association \& the Institute of Electrical and Electronics Engineers (IEEE).; 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe, EPE 2017 ECCE Europe ; Conference date: 11-09-2017 Through 14-09-2017",

year = "2017",

month = nov,

day = "6",

doi = "10.23919/EPE17ECCEEurope.2017.8098916",

language = "English",

isbn = "978-1-5386-0530-1",

booktitle = "2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)",

publisher = "IEEE",

address = "United States",

}

Schweizer, M & Soeiro, TB 2017, Heatsink-less Quasi 3-level flying capacitor inverter based on low voltage SMD MOSFETs. in 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)., 8098916, IEEE, 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe, Warsaw, Poland, 11/09/17. https://doi.org/10.23919/EPE17ECCEEurope.2017.8098916

TY - GEN

T1 - Heatsink-less Quasi 3-level flying capacitor inverter based on low voltage SMD MOSFETs

AU - Schweizer, Mario

AU - Soeiro, Thiago B.

N1 - Conference code: 19

PY - 2017/11/6

Y1 - 2017/11/6

N2 - Outstanding efficiencies can be achieved by the utilization of the latest technology of low voltage, SMD-packaged Si-or GaN-based semiconductors. These devices allow a heatsink- and fan-less converter design, thus lightweight and high power density converters are typically derived. This paper investigates the advantages of using these relatively low cost SMD-packaged devices in medium power industrial applications. A Quasi 3-level Flying-Capacitor topology is proposed. A cost-performing map is presented in order to verify the benefits of designing this system with low voltage Si-or GaN-based MOSFETs against the latest 650 V IGBTs and 900 V SiC MOSFETs. Finally, a heatsink-less 3.3 kW single-phase inverter prototype implementing 150 V SMD-packaged Si MOSFETs was designed and successfully tested.

AB - Outstanding efficiencies can be achieved by the utilization of the latest technology of low voltage, SMD-packaged Si-or GaN-based semiconductors. These devices allow a heatsink- and fan-less converter design, thus lightweight and high power density converters are typically derived. This paper investigates the advantages of using these relatively low cost SMD-packaged devices in medium power industrial applications. A Quasi 3-level Flying-Capacitor topology is proposed. A cost-performing map is presented in order to verify the benefits of designing this system with low voltage Si-or GaN-based MOSFETs against the latest 650 V IGBTs and 900 V SiC MOSFETs. Finally, a heatsink-less 3.3 kW single-phase inverter prototype implementing 150 V SMD-packaged Si MOSFETs was designed and successfully tested.

KW - High power density systems

KW - MOSFET

KW - Photovoltaic

KW - Thermal design

KW - Voltage source inverters (VSI)

KW - n/a OA procedure

UR - https://www.scopus.com/pages/publications/85042052279

U2 - 10.23919/EPE17ECCEEurope.2017.8098916

DO - 10.23919/EPE17ECCEEurope.2017.8098916

M3 - Conference contribution

SN - 978-1-5386-0530-1

SN - 978-90-75815-26-9 (USB)

BT - 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

PB - IEEE

T2 - 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe

Y2 - 11 September 2017 through 14 September 2017

ER -

Heatsink-less Quasi 3-level flying capacitor inverter based on low voltage SMD MOSFETs

Abstract

Conference

UN SDGs

Keywords

Access to Document

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Cite this