Heterogeneous oxidation of Si(111) 7 x 7 monitored with Kelvin Probe Force Microscopy

Jacobus Marinus Sturm; Herbert Wormeester; Bene Poelsema

doi:10.1016/j.susc.2007.07.016

Heterogeneous oxidation of Si(111) 7 x 7 monitored with Kelvin Probe Force Microscopy

Jacobus Marinus Sturm, Herbert Wormeester, Bene Poelsema

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(1 1 1) 7 × 7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface. The molecular Höfer precursor has a pronounced influence on the development of the interface bonding

Original language	Undefined
Pages (from-to)	4598-4602
Number of pages	5
Journal	Surface science
Volume	601
Issue number	19
DOIs	https://doi.org/10.1016/j.susc.2007.07.016
Publication status	Published - 2007

Keywords

METIS-242118
IR-74897

Access to Document

10.1016/j.susc.2007.07.016

Cite this

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title = "Heterogeneous oxidation of Si(111) 7 x 7 monitored with Kelvin Probe Force Microscopy",

abstract = "Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(1 1 1) 7 × 7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface. The molecular H{\"o}fer precursor has a pronounced influence on the development of the interface bonding",

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author = "Sturm, {Jacobus Marinus} and Herbert Wormeester and Bene Poelsema",

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language = "Undefined",

volume = "601",

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journal = "Surface science",

issn = "0039-6028",

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T1 - Heterogeneous oxidation of Si(111) 7 x 7 monitored with Kelvin Probe Force Microscopy

AU - Sturm, Jacobus Marinus

AU - Wormeester, Herbert

AU - Poelsema, Bene

PY - 2007

Y1 - 2007

N2 - Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(1 1 1) 7 × 7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface. The molecular Höfer precursor has a pronounced influence on the development of the interface bonding

AB - Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(1 1 1) 7 × 7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface. The molecular Höfer precursor has a pronounced influence on the development of the interface bonding

KW - METIS-242118

KW - IR-74897

U2 - 10.1016/j.susc.2007.07.016

DO - 10.1016/j.susc.2007.07.016

M3 - Article

SN - 0039-6028

VL - 601

SP - 4598

EP - 4602

JO - Surface science

JF - Surface science

IS - 19

ER -