Heterogeneous oxidation of Si(111) 7 x 7 monitored with Kelvin Probe Force Microscopy

Jacobus Marinus Sturm; Herbert Wormeester; Bene Poelsema

doi:10.1016/j.susc.2007.07.016

Heterogeneous oxidation of Si(111) 7 x 7 monitored with Kelvin Probe Force Microscopy

Jacobus Marinus Sturm, Herbert Wormeester, Bene Poelsema

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

Abstract

Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(1 1 1) 7 × 7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface. The molecular Höfer precursor has a pronounced influence on the development of the interface bonding

Original language	Undefined
Pages (from-to)	4598-4602
Number of pages	5
Journal	Surface science
Volume	601
Issue number	19
DOIs	https://doi.org/10.1016/j.susc.2007.07.016
Publication status	Published - 2007

Keywords

METIS-242118
IR-74897

Cite this

Sturm, J. M., Wormeester, H., & Poelsema, B. (2007). Heterogeneous oxidation of Si(111) 7 x 7 monitored with Kelvin Probe Force Microscopy. Surface science, 601(19), 4598-4602. https://doi.org/10.1016/j.susc.2007.07.016

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AU - Wormeester, Herbert

AU - Poelsema, Bene

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N2 - Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(1 1 1) 7 × 7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface. The molecular Höfer precursor has a pronounced influence on the development of the interface bonding

AB - Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(1 1 1) 7 × 7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface. The molecular Höfer precursor has a pronounced influence on the development of the interface bonding

KW - METIS-242118

KW - IR-74897

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DO - 10.1016/j.susc.2007.07.016

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Access to Document

10.1016/j.susc.2007.07.016