High aspect ratio single crystalline silicon microstructures fabricated with multi layer substrates

C. Gui, Henricus V. Jansen, Johan W. Berenschot, Johannes G.E. Gardeniers, Michael Curt Elwenspoek

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)
45 Downloads (Pure)

Abstract

This paper reports a method for making high aspect ratio single crystalline silicon (SCS) microstructures on multi layer substrates using chemical mechanical polishing (CMP), silicon fusion bonding (SFB) and reactive ion etching (RIE) techniques. First Si-SiO2-PolySi-SiO2-Si sandwich wafers were fabricated using CMP and SFB. Then microstructures were fabricated on these sandwich wafers using an one run self-aligned RIE process, where polysilicon was used as the sacrificial layer. Polishing and bonding of low pressure chemical vapour deposition (LPCVD) polysilicon were studied. A LPCVD Si3+xN4 polishing stop layer technique was developed to accurately control the final thickness of the device layer. The uniformity of the device layer was improved as well
Original languageEnglish
Title of host publicationProceedings of Transducers 1997
Place of PublicationChicago, USA
PublisherIEEE
Pages633-636
ISBN (Print)0-7803-3829-4
DOIs
Publication statusPublished - 16 Jun 1997
Event1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997 - Chicago, United States
Duration: 16 Jun 199719 Jun 1997

Publication series

Name
PublisherIEEE
Volume1

Conference

Conference1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997
Abbreviated titleTRANSDUCERS 97
CountryUnited States
CityChicago
Period16/06/9719/06/97

Keywords

  • IR-15998
  • METIS-112880

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