High confinement, high yield Si3N4 waveguides for nonlinear optical applications

Jörn P. Epping; Marcel Hoekman; Richard Mateman; Arne Leinse; René G. Heideman; Albert  van Rees; Peter J.M. van der Slot; Chris J. Lee; Klaus-J. Boller

doi:10.1364/OE.23.000642

High confinement, high yield Si₃N₄ waveguides for nonlinear optical applications

Jörn P. Epping, Marcel Hoekman, Richard Mateman, Arne Leinse, René G. Heideman, Albert van Rees, Peter J.M. van der Slot, Chris J. Lee, Klaus-J. Boller^*

^*Corresponding author for this work

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Abstract

In this paper we present a novel fabrication technique for silicon nitride (Si₃N₄) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si₃N₄ layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

Original language	English
Pages (from-to)	642-648
Journal	Optics express
Volume	23
Issue number	2
DOIs	https://doi.org/10.1364/OE.23.000642
Publication status	Published - 26 Jan 2015

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Epping2015highFinal published version, 3 MBLicence: CC BY

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title = "High confinement, high yield Si3N4 waveguides for nonlinear optical applications",

abstract = "In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.",

author = "Epping, {J{\"o}rn P.} and Marcel Hoekman and Richard Mateman and Arne Leinse and Heideman, {Ren{\'e} G.} and {van Rees}, Albert and {van der Slot}, {Peter J.M.} and Lee, {Chris J.} and Klaus-J. Boller",

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AU - Epping, Jörn P.

AU - Hoekman, Marcel

AU - Mateman, Richard

AU - Leinse, Arne

AU - Heideman, René G.

AU - van Rees, Albert

AU - van der Slot, Peter J.M.

AU - Lee, Chris J.

AU - Boller, Klaus-J.

PY - 2015/1/26

Y1 - 2015/1/26

N2 - In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

AB - In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

U2 - 10.1364/OE.23.000642

DO - 10.1364/OE.23.000642

M3 - Article

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VL - 23

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EP - 648

JO - Optics express

JF - Optics express

IS - 2

ER -

High confinement, high yield Si3N4 waveguides for nonlinear optical applications

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High confinement, high yield Si₃N₄ waveguides for nonlinear optical applications