High energy implanted transistor fabrication

J. Middelhoek

Research output: Contribution to journalArticleAcademic

3 Citations (Scopus)
94 Downloads (Pure)

Abstract

High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.
Original languageUndefined
JournalMaterials science & engineering B
Volume2
Issue number1-3
DOIs
Publication statusPublished - 1989

Keywords

  • IR-70420

Cite this

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title = "High energy implanted transistor fabrication",
abstract = "High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.",
keywords = "IR-70420",
author = "J. Middelhoek",
year = "1989",
doi = "10.1016/0921-5107(89)90070-6",
language = "Undefined",
volume = "2",
journal = "Materials science & engineering B",
issn = "0921-5107",
publisher = "Taylor & Francis",
number = "1-3",

}

High energy implanted transistor fabrication. / Middelhoek, J.

In: Materials science & engineering B, Vol. 2, No. 1-3, 1989.

Research output: Contribution to journalArticleAcademic

TY - JOUR

T1 - High energy implanted transistor fabrication

AU - Middelhoek, J.

PY - 1989

Y1 - 1989

N2 - High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.

AB - High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.

KW - IR-70420

U2 - 10.1016/0921-5107(89)90070-6

DO - 10.1016/0921-5107(89)90070-6

M3 - Article

VL - 2

JO - Materials science & engineering B

JF - Materials science & engineering B

SN - 0921-5107

IS - 1-3

ER -