High energy implanted transistor fabrication

J. Middelhoek

    Research output: Contribution to journalArticleAcademic

    3 Citations (Scopus)
    313 Downloads (Pure)


    High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.
    Original languageEnglish
    Pages (from-to)15-19
    JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
    Issue number1-3
    Publication statusPublished - 1989
    EventE-MRS Spring Meeting 1988 - Strasbourg, France
    Duration: 31 May 19882 Jun 1988


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