Abstract
High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.
Original language | English |
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Pages (from-to) | 15-19 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 2 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 1989 |
Event | E-MRS Spring Meeting 1988 - Strasbourg, France Duration: 31 May 1988 → 2 Jun 1988 |