High energy implanted transistor fabrication

J. Middelhoek

    Research output: Contribution to journalArticleAcademic

    3 Citations (Scopus)
    118 Downloads (Pure)

    Abstract

    High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.
    Original languageEnglish
    JournalMaterials science & engineering B
    Volume2
    Issue number1-3
    DOIs
    Publication statusPublished - 1989

    Fingerprint

    Silicon
    Ion implantation
    Lithography
    Transistors
    transistors
    Fabrication
    fabrication
    ion implantation
    implantation
    lithography
    energy
    cross sections
    silicon
    simulation
    Hot Temperature

    Cite this

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    title = "High energy implanted transistor fabrication",
    abstract = "High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.",
    author = "J. Middelhoek",
    year = "1989",
    doi = "10.1016/0921-5107(89)90070-6",
    language = "English",
    volume = "2",
    journal = "Materials science & engineering B",
    issn = "0921-5107",
    publisher = "Taylor & Francis",
    number = "1-3",

    }

    High energy implanted transistor fabrication. / Middelhoek, J.

    In: Materials science & engineering B, Vol. 2, No. 1-3, 1989.

    Research output: Contribution to journalArticleAcademic

    TY - JOUR

    T1 - High energy implanted transistor fabrication

    AU - Middelhoek, J.

    PY - 1989

    Y1 - 1989

    N2 - High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.

    AB - High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.

    U2 - 10.1016/0921-5107(89)90070-6

    DO - 10.1016/0921-5107(89)90070-6

    M3 - Article

    VL - 2

    JO - Materials science & engineering B

    JF - Materials science & engineering B

    SN - 0921-5107

    IS - 1-3

    ER -